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參數(shù)資料
| 型號： | FDZ293P |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | P-Channel 2.5 V Specified PowerTrench BGA MOSFET |
| 中文描述： | 4.6 A, 20 V, 0.046 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 封裝： | ULTRA THIN, BGA-9 |
| 文件頁數(shù)： | 5/7頁 |
| 文件大?。?/td> | 376K |
| 代理商： | FDZ293P |
5
www.fairchildsemi.com
FDZ293P Rev. C
F
fi
e
Typical Characteristics
0
1
2
3
4
5
0
2
4
6
8
10
Q
g
, GATE CHARGE (nC)
-
G
,
I
D
= -4.6A
V
DS
= -5V
-15V
-10V
0
200
400
600
800
1000
1200
0
5
10
15
20
-V
DS
, DRAIN TO SOURCE VOLTAGE (V)
C
C
ISS
C
RSS
C
OSS
f = 1MHz
V
GS
= 0 V
Figure 7. Gate Charge Characteristics.
Figure 8. Capacitance Characteristics.
0.01
0.1
1
10
100
0.1
1
10
100
-V
DS
, DRAIN-SOURCE VOLTAGE (V)
-
D
,
DC
100ms
1s
R
DS(ON)
LIMIT
V
GS
= -4.5V
SINGLE PULSE
R
θ
JA
= 157
°
C/W
T
A
= 25
°
C
10ms
1ms
100
μ
s
10s
0
5
10
15
20
0.01
0.1
1
10
100
1000
t
1
, TIME (sec)
P
SINGLE PULSE
R
θ
JA
= 157
°
C/W
T
A
= 25
°
C
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum
Power Dissipation.
0.001
0.01
0.1
1
0.0001
0.001
0.01
0.1
1
10
100
1000
t
1
, TIME (sec)
r
T
R
θ
JA
(t) = r(t) * R
θ
JA
R
θ
JA
= 157
°
C/W
T
J
- T
A
= P * R
θ
JA
(t)
Duty Cycle, D = t
1
/ t
2
P(pk)
t
1
t
2
SINGLE PULSE
0.01
0.02
0.05
0.1
0.2
D = 0.5
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FDZ293P_06 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:P-Channel 2.5 V Specified PowerTrench㈢ BGA MOSFET |
| FDZ294N | 功能描述:MOSFET LOW_VOLTAGE RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDZ294P | 制造商:Fairchild Semiconductor Corporation 功能描述: |
| FDZ295P | 制造商:Fairchild Semiconductor Corporation 功能描述: |
| FDZ298N | 功能描述:MOSFET 20V/12V NCh MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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