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參數(shù)資料
| 型號： | FDZ202P |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | P-Channel 2.5V Specified PowerTrenchTM BGA MOSFET |
| 中文描述： | 5.5 A, 20 V, 0.045 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 封裝： | ULTRA THIN, BGA-12 |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 35K |
| 代理商： | FDZ202P |
FDZ202P Rev. A (W)
Electrical Characteristics
T
A
= 25°C unless otherwise noted
Test Conditions
Symbol
Parameter
Min
Typ Max Units
Off Characteristics
BV
DSS
Drain–Source Breakdown Voltage
BV
DSS
===
T
J
Coefficient
I
DSS
Zero Gate Voltage Drain Current
I
GSSF
Gate–Body Leakage Current,
Forward
I
GSSR
Gate–Body Leakage Current,
Reverse
On Characteristics
V
GS(th)
Gate Threshold Voltage
R
DS(on)
Static Drain–Source
On–Resistance
V
GS
= 0 V, I
D
= –250
μ
A
I
D
= –250
μ
A, Referenced to
25
°
C
V
DS
= –16 V,
V
GS
= –12 V,
–20
V
Breakdown Voltage Temperature
28
mV/
°
C
V
GS
= 0 V
V
DS
= 0 V
–1
–100
μ
A
nA
V
GS
= 12 V
V
DS
= 0 V
100
nA
(Note 2)
V
DS
= V
GS
, I
D
= –250
μ
A
V
GS
= –4.5 V,
V
GS
= –2.5 V, I
D
= –4.0 A
–0.4
–0.9
0.036
0.060
–1.5
0.045
0.075
V
I
D
= –5.5 A
Drain–Source Diode Characteristics and Maximum Ratings
I
S
Maximum Continuous Drain–Source Diode Forward Current
V
SD
Drain–Source Diode Forward
Voltage
–2.3
–1.2
A
V
V
GS
= 0 V,
I
S
= –2.3 A
(Note 2)
–0.77
Notes:
1.
R
is the a function of the junction-to-case (R
), case-to-ambient (R
) and the PC Board (R
) thermal resistance where the case thermal reference is
defined the top surface of the package. R
θ
JC
is guaranteed by design while R
θ
CA
and R
θ
BA
are determined by the user's design.
(a).
R
θ
JA
= 55
°
C/W (steady-state) when mounted on 1 in
2
of 2 oz. copper.
2.
Pulse Test: Pulse Width < 300
μ
s, Duty Cycle < 2.0%
F
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| FDZ202P_04 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:P-Channel 2.5V Specified PowerTrench BGA MOSFET |
| FDZ202P_Q | 功能描述:MOSFET 20V/12V P-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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| FDZ203N_Q | 功能描述:MOSFET 20V/12V NCh MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDZ2040L | 功能描述:電源開關(guān) IC - 配電 N-Ch 60V 100A 3mOhm PowerTrench MOSFET RoHS:否 制造商:Exar 輸出端數(shù)量:1 開啟電阻（最大值）:85 mOhms 開啟時間（最大值）:400 us 關(guān)閉時間（最大值）:20 us 工作電源電壓:3.2 V to 6.5 V 電源電流（最大值）: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOT-23-5 |
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