參數資料
型號: FDW6923
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: JFETs
英文描述: P-Channel 2.5V Specified PowerTrench MOSFET with Schottky Diode
中文描述: 3.5 A, 20 V, 0.045 ohm, P-CHANNEL, Si, POWER, MOSFET
封裝: TSSOP-8
文件頁數: 4/5頁
文件大?。?/td> 120K
代理商: FDW6923
FDW6923 Rev. D (W)
Typical Characteristics
0
1
2
3
4
5
0
3
6
9
12
Q
g
, GATE CHARGE (nC)
I
D
= -3.5A
V
DS
= -5V
-10V
-15V
0
300
600
900
1200
1500
1800
0
5
10
15
20
-V
DS
, DRAIN TO SOURCE VOLTAGE (V)
C
ISS
C
RSS
C
OSS
f = 1MHz
V
GS
= 0 V
Figure 7. Gate Charge Characteristics.
Figure 8. Capacitance Characteristics.
0.001
0.01
0.1
1
10
0
0.2
0.4
0.6
0.8
1
1.2
V
F
, FORW ARD VOLTAGE (V)
I
F
,
T
J
= 100
o
C
T
J
= 25
o
C
0.00000001
0.0000001
0.000001
0.00001
0.0001
0.001
0.01
0
5
10
15
20
V
R
, REVERSE VOLTAGE (V)
I
R
,
T
J
= 125
o
C
T
J
= 25
o
C
Figure 9. Schottky Diode Forward Voltage.
Figure 10. Schottky Diode Reverse Current.
0.001
0.01
0.1
1
0.0001
0.001
0.01
0.1
1
10
100
1000
t
1
, TIME (sec)
R
θ
JA
(t) = r(t) + R
θ
JA
R
θ
JA
= 135 °C/W
T
J
- T
A
= P * R
θ
JA
(t)
Duty Cycle, D = t
1
/ t
2
P(pk)
t
1
t
2
SINGLE PULSE
0.01
0.02
0.05
0.1
0.2
D = 0.5
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1.
Transient thermal response will change depending on the circuit board design.
F
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