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參數(shù)資料
| 型號(hào)： | FDW9926NZ |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類(lèi)： | 小信號(hào)晶體管 |
| 英文描述： | Common Drain N-Channel 2.5V specified PowerTrench MOSFET |
| 中文描述： | 4500 mA, 20 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | TSSOP-8 |
| 文件頁(yè)數(shù)： | 1/5頁(yè) |
| 文件大小： | 120K |
| 代理商： | FDW9926NZ |
January 2005
2005 Fairchild Semiconductor Corporation
FDW9926NZ Rev. D(W)
FDW9926NZ
Common Drain N-Channel 2.5V specified PowerTrench
ò
MOSFET
General Description
This N-Channel 2.5V specified MOSFET is a rugged
gate version of Fairchild's Semiconductor’s advanced
PowerTrench process. It has been optimized for power
management applications with a wide range of gate
drive voltage (2.5V – 10V).
Applications
Battery protection
Load switch
Power management
Features
4.5 A, 20 V. R
DS(ON)
= 32 m
@ V
GS
= 4.5 V
R
DS(ON)
= 45 m
@ V
GS
= 2.5 V
ESD protection diode (note 3)
High performance trench technology for extremely
low R
DS(ON)
@ V
GS
= 2.5 V
Low profile TSSOP-8 package
D1
S1
S1
G1
D2
S2
S2
G2
TSSOP-8
Pin 1
Absolute Maximum Ratings
T
A
=25
o
C unless otherwise noted
Symbol
Parameter
V
DSS
Drain-Source Voltage
V
GSS
Gate-Source Voltage
I
D
Drain Current
– Continuous
– Pulsed
P
D
Total Power Dissipation
Ratings
20
±
12
4.5
30
1.6
1.1
–55 to +150
Units
V
V
A
(Note 1a)
(Note 1a)
W
(Note 1b)
T
J
, T
STG
Operating and Storage Junction Temperature Range
°
C
Thermal Characteristics
R
θ
JA
Thermal Resistance, Junction-to-Ambient
(Note 1a)
77
114
°
C/W
(Note 1b)
Package Marking and Ordering Information
Device Marking
Device
9926NZ
FDW9926NZ
Reel Size
13’’
Tape width
12mm
Quantity
2500 units
F
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