參數(shù)資料
型號(hào): FDW6923
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: JFETs
英文描述: P-Channel 2.5V Specified PowerTrench MOSFET with Schottky Diode
中文描述: 3.5 A, 20 V, 0.045 ohm, P-CHANNEL, Si, POWER, MOSFET
封裝: TSSOP-8
文件頁(yè)數(shù): 1/5頁(yè)
文件大?。?/td> 120K
代理商: FDW6923
May 2002
2002 Fairchild Semiconductor International
FDW6923 Rev. D(W)
FDW6923
P-Channel 2.5V Specified PowerTrench
MOSFET with Schottky Diode
General Description
This P-Channel 2.5V specified MOSFET is a rugged
gate version of Fairchild Semiconductor’s advanced
PowerTrench process. It is combined with a low
forward drop Schottky diode which is isolated from the
MOSFET, providing a compact power solution for
asynchronous DC/DC converter applications.
Applications
DC/DC conversion
Features
–3.5 A, –20 V. R
DS(ON)
= 0.045
@ V
GS
= –4.5 V
R
DS(ON)
= 0.075
@ V
GS
= –2.5 V
V
F
< 0.55 V @ 1 A
High performance trench technology for extremely
low R
DS(ON)
Low profile TSSOP-8 package
D
S
S
G
C
A
A
A
TSSOP-8
Pin 1
4
3
2
1
5
6
7
8
MOSFET Absolute Maximum Ratings
T
A
=25
o
C unless otherwise noted
Symbol
Parameter
V
DSS
Drain-Source Voltage
V
GSS
Gate-Source Voltage
I
D
Drain Current – Continuous
– Pulsed
MOSFET Power Dissipation (minimum pad)
(Note 1)
Schottky Power Dissipation (minimum pad)
(Note 1)
T
J
, T
STG
Operating and Storage Junction Temperature Range
Ratings
20
±
12
3.5
30
1.2
1.0
-55 to +150
Units
V
V
A
(Note 1)
P
D
W
°
C
Schottky Maximum Ratings
V
RRM
Repetitive Peak Reverse Voltage
I
F
Average Forward Current
I
FM
Peak Forward Current
20
1.5
30
V
A
A
Thermal Characteristics
R
θ
JA
Thermal Resistance, Junction-to-Ambient
(minimum pad)
(Note 1)
MOSFET: 115
Schottky: 130
°
C/W
Package Marking and Ordering Information
Device Marking
Device
6923
FDW6923
Reel Size
13’’
Tape width
16mm
Quantity
3000 units
F
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