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參數(shù)資料
| 型號： | FDW6923 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | P-Channel 2.5V Specified PowerTrench MOSFET with Schottky Diode |
| 中文描述： | 3.5 A, 20 V, 0.045 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 封裝： | TSSOP-8 |
| 文件頁數(shù)： | 2/5頁 |
| 文件大小： | 120K |
| 代理商： | FDW6923 |
FDW6923 Rev. D (W)
Electrical Characteristics
T
A
= 25°C unless otherwise noted
Test Conditions
Symbol
Parameter
Min
Typ Max Units
Off Characteristics
BV
DSS
Drain–Source Breakdown Voltage
BV
DSS
T
J
Coefficient
I
DSS
Zero Gate Voltage Drain Current
I
GSSF
Gate–Body Leakage, Forward
I
GSSR
Gate–Body Leakage, Reverse
V
GS
= 0 V, I
D
= –250
μ
A
–20
V
Breakdown Voltage Temperature
I
D
= –250
μ
A, Referenced to25
°
C
–16
mV/
°
C
V
DS
= –16 V,
V
GS
= –12 V,
V
GS
= 12 V,
V
GS
= 0 V
V
DS
= 0 V
V
DS
= 0 V
–1
–100
100
μ
A
nA
nA
On Characteristics
V
GS(th)
Gate Threshold Voltage
V
GS(th)
T
J
Temperature Coefficient
R
DS(on)
Static Drain–Source
On–Resistance
(Note 2)
V
DS
= V
GS
, I
D
= –250
μ
A
I
D
= –250
μ
A, Referenced to25
°
C
V
GS
= –4.5 V,
V
GS
= –2.5 V,
V
GS
=–4.5 V, I
D
=–3.5A, T
J
=125
°
C
V
GS
= –4.5 V,
–0.6
–1.0
–1.5
V
Gate Threshold Voltage
3
mV/
°
C
I
D
= –3.5 A
I
D
= –2.7 A
36
56
49
45
75
72
m
I
D(on)
On–State Drain Current
V
DS
= –5 V
–15
A
g
FS
Forward Transconductance
V
DS
= –5 V,
I
D
= –3.5A
13.2
S
Dynamic Characteristics
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
1030
280
120
pF
pF
pF
V
DS
= –10 V,
f = 1.0 MHz
V
GS
= 0 V,
Switching Characteristics
(Note 2)
t
d(on)
Turn–On Delay Time
t
r
Turn–On Rise Time
t
d(off)
Turn–Off Delay Time
t
f
Turn–Off Fall Time
Q
g
Total Gate Charge
Q
gs
Gate–Source Charge
Q
gd
Gate–Drain Charge
11
18
34
34
9.7
2.2
2.4
20
32
55
55
16
ns
ns
ns
ns
nC
nC
nC
V
DD
= –5 V,
V
GS
= –4.5 V,
I
D
= –1 A,
R
GEN
= 6
V
DS
= –5V,
V
GS
= –4.5 V
I
D
= –3.5 A,
Drain–Source Diode Characteristics and Maximum Ratings
I
S
Maximum Continuous Drain–Source Diode Forward Current
V
SD
Drain–Source Diode Forward
Voltage
I
GSSR
Gate–Body Leakage, Reverse
–1.25
–1.2
A
V
V
GS
= 0 V,
I
S
= –1.25 A
(Note 2)
–0.6
V
GS
= 12 V,
V
DS
= 0 V
100
nA
Schottky Diode Characteristics
I
R
Reverse Leakage
T
J
=25
°
C
T
J
=125
°
C
T
J
=25
°
C
T
J
=125
°
C
0.6
1
0.48
0.42
50
50
8
0.55
0.50
μ
A
mA
V
V
pF
V
R
= 20V
V
F
Forward Voltage
I
F
= 1A
C
T
Junction Capacitance
V
R
= 10V
Notes:
1.
R
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. R
θ
JC
is guaranteed by design while R
θ
CA
is determined by the user's board design.
R
θ
JA
is 115
°
C/W for the MOSFET and 130
°
C/W for the Schottky Diode when mounted on a minimum pad.
2.
Pulse Test: Pulse Width < 300
μ
s, Duty Cycle < 2.0%
F
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| FDW6923_08 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:P-Channel 2.5V Specified PowerTrench剖 MOSFET with Schottky Diode |
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