參數(shù)資料
型號： FDW2601NZ
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： JFETs
英文描述： Dual N-Channel 2.5V Specified PowerTrench MOSFET
中文描述： 8.2 A, 30 V, 0.015 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
封裝： TSSOP-8
文件頁數(shù)： 8/11頁
文件大?。?/td> 270K
代理商： FDW2601NZ
FDW2601NZ Rev. A
www.fairchildsemi.com
F
8
PSPICE Electrical Model
.SUBCKT FDW2601NZ 2 1 3 ;
CA 12 8 19.3e-10
CB 15 14 19.3e-10
CIN 6 8 1.7e-9
rev June 2004
DBODY 5 7 DBODYMOD
DBREAK 7 11 DBREAKMOD
DPLCAP 10 5 DPLCAPMOD
DESD1 91 9 DESD1MOD
DESD2 91 7 DESD2MOD
EBREAK 5 11 17 18 33.3
EDS 14 8 5 8 1
EGS 13 8 6 8 1
ESG 6 10 8 6 1
EVTHRES 6 21 19 8 1
EVTEMP 6 20 18 22 1
IT 8 17 1
LDRAIN 2 5 1e-9
LGATE 1 9 0.96e-9
LSOURCE 3 7 0.19e-9
RLDRAIN 2 5 10
RLGATE 1 9 9.6
RLSOURCE 3 7 1.9
MMED 16 6 8 8 MMEDMOD
MSTRO 16 6 8 8 MSTROMOD
MWEAK 16 21 8 8 MWEAKMOD
RBREAK 17 18 RBREAKMOD 1
RDRAIN 50 16 RDRAINMOD 8.8e-3
RGATE 9 20 2.75
RSLC1 5 51 RSLCMOD 1e-6
RSLC2 5 50 1e3
RSOURCE 8 7 RSOURCEMOD 3e-4
RVTHRES 22 8 RVTHRESMOD 1
RVTEMP 18 19 RVTEMPMOD 1
S1A 6 12 13 8 S1AMOD
S1B 13 12 13 8 S1BMOD
S2A 6 15 14 13 S2AMOD
S2B 13 15 14 13 S2BMOD
VBAT 22 19 DC 1
ESLC 51 50 VALUE={(V(5,51)/ABS(V(5,51)))*(PWR(V(5,51)/(1e-6*120),2.5))}
.MODEL DBODYMOD D (IS = 18.6e-12 N=0.93 RS = 6.6e-3 IKF=0.2 TRS1 = 1.7e-3 TRS2 = 2e-6 XTI=0.1 TIKF=0.001
CJO =5.2e-10 TT=8.7e-9 M = 0.58)
.MODEL DBREAKMOD D (RS = 1e-1 TRS1 = 9e-3 TRS2 = -2e-5)
.MODEL DPLCAPMOD D (CJO = 0.76e-9 IS = 1e-30 N = 10 M = 0.58)
.MODEL DESD1MOD D (BV=10.5 TBV1=-0.0018 N=9.4 RS=5)
.MODEL DESD2MOD D (BV=10.5 TBV1=-0.0018 N=9.4 RS=5)
.MODEL MMEDMOD NMOS (VTO = 1.0 KP = 1.7 IS=1e-30 N = 10 TOX = 1 L = 1u W = 1u RG = 2.75)
.MODEL MSTROMOD NMOS (VTO = 1.27 KP = 147 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u)
.MODEL MWEAKMOD NMOS (VTO = 0.83 KP = 0.05 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u RG = 27.5 RS = 0.1)
.MODEL RBREAKMOD RES (TC1 = 8.8e-4 TC2 = -13e-7)
.MODEL RDRAINMOD RES (TC1 = 1e-9 TC2 = 1e-5)
.MODEL RSLCMOD RES (TC1 = 2e-9 TC2 = 5e-8)
.MODEL RSOURCEMOD RES (TC1 = 8.2e-2 TC2 = 1e-6)
.MODEL RVTHRESMOD RES (TC1 = -13e-4 TC2 = -2.8e-6)
.MODEL RVTEMPMOD RES (TC1 = -1.3e-3 TC2 = 1e-6)
.MODEL S1AMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -6 VOFF= -1.5)
.MODEL S1BMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -1.5 VOFF= -6)
.MODEL S2AMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -0.5 VOFF= 0.3)
.MODEL S2BMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = 0.3 VOFF= -0.5)
ENDS
Note: For further discussion of the PSPICE model, consult
A New PSPICE Sub-Circuit for the Power MOSFET Featuring Global
Temperature Options
; IEEE Power Electronics Specialist Conference Records, 1991, written by William J. Hepp and C. Frank
Wheatley.
+
-
6
8
+
-
5
51
+
-
19
8
+
-
17
18
-
6
8
+
-
5
8
+
-
RBREAK
RVTEMP
VBAT
RVTHRES
IT
17
18
19
22
12
13
15
S1A
S1B
S2A
S2B
CA
CB
EGS
EDS
14
8
13
8
14
13
MWEAK
EBREAK
DBODY
RSOURCE
SOURCE
3
11
7
LSOURCE
RLSOURCE
CIN
RDRAIN
16
EVTHRES
21
8
MMED
MSTRO
DRAIN
2
LDRAIN
RLDRAIN
DBREAK
DPLCAP
ESLC
RSLC1
51
10
5
50
RSLC2
1
GATE
RGATE
EVTEMP
18
22
9
ESG
LGATE
RLGATE
20
+
-
+
DESD1
91
DESD2
6
相關(guān)PDF資料
PDF描述
FDW262P 20V P-Channel PowerTrench MOSFET
FDW264P P-Channel 2.5V Specified PowerTrench MOSFET
FDW6923 P-Channel 2.5V Specified PowerTrench MOSFET with Schottky Diode
FDW9926NZ Common Drain N-Channel 2.5V specified PowerTrench MOSFET
FDW9926 Dual N-Channel 2.5V Specified PowerTrench MOSFET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
FDW2601NZ_08 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Dual N-Channel 2.5V Specified PowerTrench MOSFET
FDW2601NZ_NL 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Dual N-Channel 2.5V Specified PowerTrench MOSFET
FDW262P 功能描述:MOSFET 20V PCh MOSFET Power Trench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDW262P_Q 功能描述:MOSFET 20V PCh MOSFET Power Trench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDW264P 功能描述:MOSFET P-Ch 2.5V Spec PowerTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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