參數資料
型號： FDW2601NZ
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： JFETs
英文描述： Dual N-Channel 2.5V Specified PowerTrench MOSFET
中文描述： 8.2 A, 30 V, 0.015 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
封裝： TSSOP-8
文件頁數： 10/11頁
文件大?。?/td> 270K
代理商： FDW2601NZ
FDW2601NZ Rev. A
www.fairchildsemi.com
F
10
SPICE Thermal Model
REV June 2004
FDW2601NZ_JA Junction Ambient
Minimum copper pad area
CTHERM1 Junction c2 5.7e-4
CTHERM2 c2 c3 5.72e-4
CTHERM3 c3 c4 5.8e-4
CTHERM4 c4 c5 4.7e-3
CTHERM5 c5 c6 5.1e-3
CTHERM6 c6 c7 0.02
CTHERM7 c7 c8 0.2
CTHERM8 c8 Ambient 6
RTHERM1 Junction c2 0.003
RTHERM2 c2 c3 0.25
RTHERM3 c3 c4 1.0
RTHERM4 c4 c5 1.1
RTHERM5 c5 c6 7.5
RTHERM6 c6 c7 33.6
RTHERM7 c7 c8 33.7
RTHERM8 c8 Ambient 33.8
SABER Thermal Model
SABER thermal model FDW2601NZ
Minimum copper pad area
template thermal_model th tl
thermal_c th, tl
{
ctherm.ctherm1 th c2 = 5.7e-4
ctherm.ctherm2 c2 c3 = 5.72e-4
ctherm.ctherm3 c3 c4 = 5.8e-4
ctherm.ctherm4 c4 c5 = 4.7e-3
ctherm.ctherm5 c5 c6 = 5.1e-3
ctherm.ctherm6 c6 c7 = 0.02
ctherm.ctherm7 c7 c8 = 0.2
ctherm.ctherm8 c8 tl = 6
rtherm.rtherm1 th c2 = 0.003
rtherm.rtherm2 c2 c3 = 0.25
rtherm.rtherm3 c3 c4 = 1.0
rtherm.rtherm4 c4 c5 = 1.1
rtherm.rtherm5 c5 c6 = 7.5
rtherm.rtherm6 c6 c7 = 33.6
rtherm.rtherm7 c7 c8 = 33.7
rtherm.rtherm8 c8 tl = 33.8
}
RTHERM6
RTHERM8
RTHERM7
RTHERM5
RTHERM4
RTHERM3
CTHERM4
CTHERM6
CTHERM5
CTHERM3
CTHERM2
CTHERM1
tl
8
7
6
5
4
3
JUNCTION
AMBIENT
2
th
RTHERM2
RTHERM1
CTHERM7
CTHERM8
相關PDF資料
PDF描述
FDW262P 20V P-Channel PowerTrench MOSFET
FDW264P P-Channel 2.5V Specified PowerTrench MOSFET
FDW6923 P-Channel 2.5V Specified PowerTrench MOSFET with Schottky Diode
FDW9926NZ Common Drain N-Channel 2.5V specified PowerTrench MOSFET
FDW9926 Dual N-Channel 2.5V Specified PowerTrench MOSFET
相關代理商/技術參數
參數描述
FDW2601NZ_08 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Dual N-Channel 2.5V Specified PowerTrench MOSFET
FDW2601NZ_NL 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Dual N-Channel 2.5V Specified PowerTrench MOSFET
FDW262P 功能描述:MOSFET 20V PCh MOSFET Power Trench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDW262P_Q 功能描述:MOSFET 20V PCh MOSFET Power Trench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDW264P 功能描述:MOSFET P-Ch 2.5V Spec PowerTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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