參數(shù)資料
型號(hào)： FDW2521C
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： 小信號(hào)晶體管
英文描述： Complementary PowerTrench MOSFET
中文描述： 5500 mA, 20 V, 2 CHANNEL, N AND P-CHANNEL, Si, SMALL SIGNAL, MOSFET, MO-153AA
封裝： TSSOP-8
文件頁數(shù)： 1/8頁
文件大?。?/td> 149K
代理商： FDW2521C
May 2002
2002 Fairchild Semiconductor Corporation
FDW2521C Rev D(W)
FDW2521C
Complementary PowerTrench
MOSFET
General Description
This complementary MOSFET device is produced using
Fairchild’s advanced PowerTrench process that has
been especially tailored to minimize the on-state
resistance and yet maintain low gate charge for
superior switching performance.
Applications
DC/DC conversion
Power management
Load switch
Features
Q1: N-Channel
5.5 A, 20 V. R
DS(ON)
= 21 m
@ V
GS
= 4.5 V
R
DS(ON)
= 35 m
@ V
GS
= 2.5 V
Q2: P-Channel
–3.8 A, 20 V. R
DS(ON)
= 43 m
@ V
GS
= –4.5 V
R
DS(ON)
= 70 m
@ V
GS
= –2.5 V
High performance trench technology for extremely
low R
DS(ON)
Low profile TSSOP-8 package
D1
S1
S1
G1
D2
S2
S2
G2
TSSOP-8
Pin 1
8
7
6
5
1
2
3
4
Q1
Q2
Absolute Maximum Ratings
T
A
= 25°C unless otherwise noted
Symbol
Parameter
Q1
Q2
Units
V
DSS
V
GSS
I
D
P
D
T
J
, T
STG
Drain-Source Voltage
Gate-Source Voltage
Drain Current - Continuous
Power Dissipation
20
±
12
5.5
30
–20
±
12
–3.8
–30
V
V
A
W
°
C
(Note 1a)
- Pulsed
(Note 1a)
(Note 1b)
1.0
0.6
Operating and Storage Junction Temperature Range
-55 to +150
Thermal Characteristics
R
θ
JA
Thermal Resistance, Junction-to-Ambient
(Note 1a)
(Note 1b)
125
208
°
C/W
Package Marking and Ordering Information
Device Marking
Device
2521C
FDW2521C
Reel Size
13’’
Tape width
12mm
Quantity
3000 units
F
相關(guān)PDF資料
PDF描述
FDW252P P-Channel 2.5V Specified PowerTrench MOSFET
FDW254PZ P-Channel 1.8V Specified PowerTrench MOSFET
FDW254P P-Channel 1.8V Specified PowerTrench MOSFET
FDW256P 30V P-Channel PowerTrench MOSFET
FDW258P P-Channel 1.8V Specified PowerTrench MOSFET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
FDW2521C_08 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Complementary PowerTrench MOSFET
FDW2521C_Q 功能描述:MOSFET 20V/-20V N/P RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDW252P 功能描述:MOSFET TSSOP-8 P-CH 2.5V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDW252P_Q 功能描述:MOSFET TSSOP-8 P-CH 2.5V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDW254P 功能描述:MOSFET TSSOP-8 P-CH 1.8V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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