參數(shù)資料
型號： FDS6910
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： 小信號晶體管
英文描述： Dual N-Channel Logic Level PowerTrench MOSFET
中文描述： 7500 mA, 30 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
封裝： SO-8
文件頁數(shù)： 3/6頁
文件大?。?/td> 112K
代理商： FDS6910
FDS6910 Rev B(W)
Electrical Characteristics
Symbol
TA = 25°C unless otherwise noted
Test Conditions
Parameter
Min Typ Max Units
Drain–Source Diode Characteristics and Maximum Ratings
I
S
Maximum Continuous Drain–Source Diode Forward Current
V
SD
Drain–Source Diode Forward
Voltage
t
rr
Diode Reverse Recovery Time
Q
rr
Diode Reverse Recovery Charge
1.3
1.2
A
V
V
GS
= 0 V,
I
S
= 1.3 A
(Note 2)
24
13
nS
nC
I
F
= 7.5 A, d
iF
/d
t
= 100 A/μs
Notes:
1.
R
JA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. R
θ
JC
is guaranteed by design while R
θ
CA
is determined by the user's board design.
a) 78°C/W when
mounted on a 0.5in
2
pad of 2 oz copper
b) 125°C/W when
mounted on a 0.02
in
pad of 2 oz
copper
c) 135°C/W when mounted on a
minimum mounting pad.
Scale 1 : 1 on letter size paper
2.
Pulse Test: Pulse Width < 300
μ
s, Duty Cycle < 2.0%
F
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相關代理商/技術(shù)參數(shù)
參數(shù)描述
FDS6910-CUT TAPE 制造商:FAIRCHILD 功能描述:FDS6910 Series 30V 13 mOhm Dual N-Channel Logic Level PowerTrench Mosfet- SOIC-8
FDS6911 功能描述:MOSFET LOW_VOLTAGE RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDS6911_11 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Dual N-Channel Logic Level PowerTrench MOSFET 20V, 7.5A, 13m??
FDS6912 功能描述:MOSFET SO-8 DUAL N-CH 30V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDS6912_0007 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Dual N-Channel Logic Level PWM Optimized PowerTrench MOSFET
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