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參數(shù)資料
| 型號(hào)： | FDS6910 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | Dual N-Channel Logic Level PowerTrench MOSFET |
| 中文描述： | 7500 mA, 30 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | SO-8 |
| 文件頁數(shù)： | 2/6頁 |
| 文件大?。?/td> | 112K |
| 代理商： | FDS6910 |
FDS6910 Rev B(W)
Electrical Characteristics
T
A
= 25°C unless otherwise noted
Test Conditions
Symbol
Parameter
Min
Typ Max Units
Off Characteristics
BV
DSS
BV
DSS
T
J
I
DSS
Drain–Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
V
GS
= 0 V,
I
D
= 250
μ
A, Referenced to 25
°
C
I
D
= 250
μ
A
30
V
28
mV/
°
C
V
DS
= 24 V,
V
DS
= 24 V, V
GS
= 0 V, T
J
= 55
°
C
V
GS
=
±
20 V, V
DS
= 0 V
V
GS
= 0 V
1
10
±
100
μ
A
nA
I
GSS
Gate–Source Leakage
On Characteristics
V
GS(th)
V
GS(th)
T
J
R
DS(on)
(Note 2)
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
V
DS
= V
GS
,
I
D
= 250
μ
A, Referenced to 25
°
C
I
D
= 250
μ
A
1
1.8
–4.7
3
V
mV/
°
C
V
GS
= 10 V,
V
GS
= 4.5 V, I
D
= 6.5 A
V
GS
= 10 V, I
D
= 7.5 A,T
J
= 125
°
C
V
GS
= 10 V,
V
DS
= 5 V
V
DS
= 5 V,
I
D
= 7.5 A
I
D
= 7.5 A
10.6
13
14.5
36
13
1
7
20
m
I
D(on)
g
FS
On–State Drain Current
Forward Transconductance
20
A
S
Dynamic Characteristics
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
R
G
Gate Resistance
1130
300
100
2.4
pF
pF
pF
V
DS
= 15 V, V
GS
= 0 V,
f = 1.0 MHz
V
GS
= 15 mV, f = 1.0 MHz
Switching Characteristics
(Note 2)
t
d(on)
Turn–On Delay Time
t
r
Turn–On Rise Time
t
d(off)
Turn–Off Delay Time
t
f
Turn–Off Fall Time
Q
g(TOT)
Total Gate Charge at Vgs=10V
Q
g
Total Gate Charge at Vgs=5V
Q
gs
Gate–Source Charge
Q
gd
Gate–Drain Charge
9
5
26
7
17
9
3.1
2.7
18
10
42
14
24
13
ns
ns
ns
ns
nC
nC
nC
nC
V
DD
= 15 V,
V
GS
= 10 V,
I
D
= 1 A,
R
GEN
= 6
V
DD
= 15 V, I
D
= 7.5 A,
F
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FDS6910-CUT TAPE | 制造商:FAIRCHILD 功能描述:FDS6910 Series 30V 13 mOhm Dual N-Channel Logic Level PowerTrench Mosfet- SOIC-8 |
| FDS6911 | 功能描述:MOSFET LOW_VOLTAGE RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDS6911_11 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Dual N-Channel Logic Level PowerTrench MOSFET 20V, 7.5A, 13m?? |
| FDS6912 | 功能描述:MOSFET SO-8 DUAL N-CH 30V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDS6912_0007 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Dual N-Channel Logic Level PWM Optimized PowerTrench MOSFET |
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