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參數(shù)資料
| 型號： | FDS6910 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | Dual N-Channel Logic Level PowerTrench MOSFET |
| 中文描述： | 7500 mA, 30 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | SO-8 |
| 文件頁數(shù)： | 1/6頁 |
| 文件大?。?/td> | 112K |
| 代理商： | FDS6910 |
September 2004
FDS6910
Dual N-Channel Logic Level PowerTrench
MOSFET
2004 Fairchild Semiconductor Corporation
FDS6910 Rev BW)
General Description
These N-Channel Logic Level MOSFETs are produced
using
Fairchild
Semiconductor’s
PowerTrench process that has been especially tailored
to minimize the on-state resistance and yet maintain
superior switching performance.
advanced
These devices are well suited for low voltage and
battery powered applications where low in-line power
loss and fast switching are required.
Features
7.5 A, 30 V.
Fast switching speed
R
DS(ON)
= 13 m
@ V
GS
= 10 V
R
DS(ON)
= 1
7
m
@ V
GS
= 4.5 V
Low gate charge
High performance trench technology for extremely
low R
DS(ON)
High power and current handling capability
D
SO-8
D
D
D
D2
D2
D1
D1
S2G2S1G1
Pin 1
SO-8
4
3
2
1
5
6
7
8
Q1
Q2
Absolute Maximum Ratings
T
A
=25
o
C unless otherwise noted
Symbol
Parameter
V
DSS
Drain-Source Voltage
V
GSS
Gate-Source Voltage
I
D
Drain Current – Continuous
– Pulsed
Power Dissipation for Single Operation
T
J
, T
STG
Operating and Storage Junction Temperature Range
Ratings
30
±
20
7.5
20
1.6
1.0
0.9
–55 to +150
Units
V
V
A
(Note 1a)
(Note 1a)
(Note 1b)
P
D
(Note 1c)
W
°
C
Thermal Characteristics
R
θ
JA
Thermal Resistance, Junction-to-Ambient
R
θ
JC
Thermal Resistance, Junction-to-Case
(Note 1a)
78
40
°
C/W
°
C/W
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
FDS6910
FDS6910
Reel Size
13’’
Tape width
12mm
Quantity
2500 units
F
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| FDS6912 | Dual N-Channel Logic Level PWM Optimized PowerTrench MOSFET |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FDS6910-CUT TAPE | 制造商:FAIRCHILD 功能描述:FDS6910 Series 30V 13 mOhm Dual N-Channel Logic Level PowerTrench Mosfet- SOIC-8 |
| FDS6911 | 功能描述:MOSFET LOW_VOLTAGE RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDS6911_11 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Dual N-Channel Logic Level PowerTrench MOSFET 20V, 7.5A, 13m?? |
| FDS6912 | 功能描述:MOSFET SO-8 DUAL N-CH 30V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDS6912_0007 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Dual N-Channel Logic Level PWM Optimized PowerTrench MOSFET |
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