參數(shù)資料
型號: FDS6961
廠商: Fairchild Semiconductor Corporation
英文描述: Dual N-Channel Logic Level PowerTrenchTM MOSFET
中文描述: 雙N溝道MOSFET的邏輯電平PowerTrenchTM
文件頁數(shù): 1/8頁
文件大小: 241K
代理商: FDS6961
April 1999
FDS6961A
Dual N-Channel Logic Level PowerTrench
TM
MOSFET
General Description
These N-Channel Logic Level MOSFETs are
produced
using
Fairchild
advanced PowerTrench process that has been
especially tailored to minimize the on-state
resistance and yet maintain superior switching
performance.
These devices are well suited for low voltage
and battery powered applications where low
in-line power loss and fast switching are
required.
Features
3.5 A, 30 V. R
DS(ON)
= 0.090
@ V
GS
= 10 V
R
DS(ON)
= 0.140
@ V
GS
= 4.5 V.
Absolute Maximum Ratings
T
A
= 25
o
C unless other wise noted
Symbol
Parameter
Ratings
Units
V
DSS
V
GSS
I
D
Drain-Source Voltage
30
V
Gate-Source Voltage
±20
V
Drain Current - Continuous
(Note 1a)
- Pulsed
3.5
14
A
P
D
Power Dissipation for Single Operation
(Note 1)
2
W
Power Dissipation for Single Operation
(Note 1a)
1.6
(Note 1b)
1
(Note 1c)
0.9
T
J
,T
STG
Operating and Storage Temperature Range
-55 to 150
°C
THERMAL CHARACTERISTICS
R
θ
JA
R
θ
JC
Thermal Resistance, Junction-to-Ambient
(Note 1a)
78
°C/W
Thermal Resistance, Junction-to-Case
(Note 1)
40
°C/W
FDS6961A Rev.C
Fast switching speed.
Low gate charge (2.1nC typical).
High performance trench technology for extremely low
R
DS(ON)
.
High power and current handling capability.
SOT-23
SuperSOT
TM
-8
SOIC-16
SO-8
SOT-223
SuperSOT
TM
-6
Semiconductor's
S1
D1
S2
G1
SO-8
D2
D2
D1
G2
FDS
6961A
pin
1
1
5
7
8
2
3
4
6
1999 Fairchild Semiconductor Corporation
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FDS6961A 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET
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