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參數(shù)資料
| 型號(hào)： | FDS6912A |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類(lèi)： | 小信號(hào)晶體管 |
| 英文描述： | Dual N-Channel, Logic Level, PowerTrenchTM MOSFET |
| 中文描述： | 6000 mA, 30 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | SO-8 |
| 文件頁(yè)數(shù)： | 1/4頁(yè) |
| 文件大?。?/td> | 222K |
| 代理商： | FDS6912A |
June 1998
FDS6912A
Dual N-Channel, Logic Level, PowerTrench
TM
MOSFET
General Description
Features
6 A, 30 V. R
DS(ON)
= 0.028
@ V
GS
= 10 V
R
DS(ON)
= 0.035
@ V
GS
= 4.5 V.
Absolute Maximum Ratings
T
A
= 25
o
C unless other wise noted
Symbol
Parameter
FDS6912A
Units
V
DSS
V
GSS
Drain-Source Voltage
30
V
Gate-Source Voltage
±20
V
I
D
Drain Current - Continuous
(Note 1a)
6
A
- Pulsed
20
P
D
Power Dissipation for Single Operation
(Note 1a)
2
W
(Note 1b)
1.6
(Note 1c)
0.9
T
J
,T
STG
Operating and Storage Temperature Range
-55 to 150
°C
THERMAL CHARACTERISTICS
R
θ
JA
R
θ
JC
Thermal Resistance, Junction-to-Ambient
(Note 1a)
78
°C/W
Thermal Resistance, Junction-to-Case
(Note 1)
40
°C/W
FDS6912A Rev.C
Fast switching speed.
Low gate charge (typical 9 nC).
High performance trench technology for extremely low
R
DS(ON)
.
High power and current handling capability.
SOT-23
SuperSOT
TM
-8
SOIC-16
SO-8
SOT-223
SuperSOT
TM
-6
These N-Channel Logic Level MOSFETs are
produced
using
Fairchild
advanced PowerTrench process that has been
especially tailored to minimize the on-state
resistance and yet maintain superior switching
performance.
These devices are well suited for low voltage and
battery powered applications where low in-line
power loss and fast switching are required.
Semiconductor's
S1
D1
S2
G1
SO-8
D2
FDS
6912A
D2
D1
G2
pin
1
1
5
7
8
2
3
4
6
1998 Fairchild Semiconductor Corporation
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FDS6912A | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET TRANSISTOR ROHS COMPLIANT:NO |
| FDS6912A_03 | 制造商:FAIRCHILD 制造商全稱(chēng):Fairchild Semiconductor 功能描述:Dual N-Channel Logic Level PowerTrench MOSFET |
| FDS6912A_Q | 功能描述:MOSFET Dual N-Channel 30V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDS6912A-CUT TAPE | 制造商:FAIRCHILD 功能描述:FDS6912A Series 30 V 28 mOhm Dual N-Ch Logic Level PowerTrench Mosfet - SOIC-8 |
| FDS6921A | 制造商:Rochester Electronics LLC 功能描述: 制造商:Fairchild Semiconductor Corporation 功能描述: |
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