參數(shù)資料
型號： FDS6900S
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： JFETs
英文描述： Dual N-Ch PowerTrench SyncFet⑩
中文描述： 6.9 A, 30 V, 0.03 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
封裝： SO-8
文件頁數(shù)： 8/9頁
文件大?。?/td> 154K
代理商： FDS6900S
FDS6900S Rev C (W)
Typical Characteristics
(continued) This section copied from FDS6984S datasheet
SyncFET Schottky Body Diode
Characteristics
Fairchild’s SyncFET process embeds a Schottky diode
in parallel with PowerTrench MOSFET. This diode
exhibits similar characteristics to a discrete external
Schottky diode in parallel with a MOSFET.
Figure 22
shows the reverse recovery characteristic of the
FDS6900S.
TIME : 10ns/div
C
Figure 22. FDS6900S SyncFET body
diode reverse recovery characteristic.
For comparison purposes,
Figure 23
shows the reverse
recovery characteristics of the body diode of an
equivalent size MOSFET produced without SyncFET
(FDS6690).
TIME : 10ns/div
C
Figure 23. Non-SyncFET (FDS6690) body
diode reverse recovery characteristic.
Schottky barrier diodes exhibit significant leakage at
high temperature and high reverse voltage. This will
increase the power in the device.
0.00001
0.0001
0.001
0.01
0.1
0
5
10
15
20
25
30
V
DS
, REVERSE VOLTAGE (V)
I
D
,
125
o
C
25
o
C
100
o
C
Figure 24. SyncFET body diode reverse
leakage versus drain-source voltage and
temperature
F
相關(guān)PDF資料
PDF描述
FDS6910 Dual N-Channel Logic Level PowerTrench MOSFET
FDS6912A Dual N-Channel, Logic Level, PowerTrenchTM MOSFET
FDS6912 Dual N-Channel Logic Level PWM Optimized PowerTrench MOSFET
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
FDS6910 功能描述:MOSFET Dual N-Ch LogicLevel PowerTrench MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDS6910-CUT TAPE 制造商:FAIRCHILD 功能描述:FDS6910 Series 30V 13 mOhm Dual N-Channel Logic Level PowerTrench Mosfet- SOIC-8
FDS6911 功能描述:MOSFET LOW_VOLTAGE RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDS6911_11 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Dual N-Channel Logic Level PowerTrench MOSFET 20V, 7.5A, 13m??
FDS6912 功能描述:MOSFET SO-8 DUAL N-CH 30V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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