參數(shù)資料
型號: FDS6900S
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: JFETs
英文描述: Dual N-Ch PowerTrench SyncFet⑩
中文描述: 6.9 A, 30 V, 0.03 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
封裝: SO-8
文件頁數(shù): 3/9頁
文件大?。?/td> 154K
代理商: FDS6900S
FDS6900S Rev C (W)
Electrical Characteristics
(continued)
Symbol
Drain–Source Diode Characteristics and Maximum Ratings
I
S
Maximum Continuous Drain-Source Diode Forward Current
T
A
= 25°C unless otherwise noted
Parameter
Test Conditions
Type
Min
Typ
Max
Units
Q2
Q1
Q2
2.3
1.3
A
ns
T
rr
Q
rr
T
rr
Q
rr
V
SD
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Time
Reverse Recovery Charge
Drain-Source Diode Forward
Voltage
17
24
18
15
0.4
0.6
0.7
I
F
= 8.2 A,
d
iF
/d
t
= 300 A/μs
(Note 3)
nC
ns
I
F
= 6.9 A,
d
iF
/d
t
= 100 A/μs
(Note 3)
Q1
nC
V
V
GS
= 0 V, I
S
= 2.3 A
V
GS
= 0 V, I
S
= 5 A
V
GS
= 0 V, I
S
= 1.3 A
(Note 2)
(Note 2)
(Note 2)
Q2
Q2
Q1
0.7
1.0
1.2
Notes:
1.
R
JA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. R
θ
JC
is guaranteed by design while R
θ
CA
is determined by the user's board design.
a)
78°C/W when
mounted on a
0.5in
pad of 2
oz copper
b)
125°C/W when
mounted on a
0.02 in
pad of
2 oz copper
c)
135°C/W when
mounted on a
minimum pad.
Scale 1 : 1 on letter size paper
2.
Pulse Test: Pulse Width < 300
μ
s, Duty Cycle < 2.0%
3.
See “SyncFET Schottky body diode characteristics” below.
F
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