參數(shù)資料
型號： FDS6900AS
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： 小信號晶體管
英文描述： Dual N-Ch PowerTrench SyncFET
中文描述： 8200 mA, 30 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
封裝： SO-8
文件頁數(shù)： 2/10頁
文件大?。?/td> 183K
代理商： FDS6900AS
FDS6900AS Rev
B
(X)
Electrical Characteristics
Symbol
Parameter
T
A
= 25°C unless otherwise noted
Test Conditions
Type Min
Typ Max Units
Off Characteristics
BV
DSS
Drain-Source Breakdown
Voltage
BV
DSS
T
J
Temperature Coefficient
I
DSS
Zero Gate Voltage Drain
Current
I
GSS
Gate-Body Leakage
V
GS
= 0 V,
V
GS
= 0 V,
I
D
= 10 mA, Referenced to 25
°
C
I
D
= 250 μA, Referenced to 25
°
C
V
DS
= 24 V,
V
GS
= 0 V
I
D
= 1 mA
I
D
= 250 uA
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
30
30
V
Breakdown Voltage
27
22
mV/
°
C
μ
A
500
1
±
100
V
GS
=
±
20 V, V
DS
= 0 V
nA
On Characteristics
V
GS(th)
Gate Threshold Voltage
(Note 2)
V
DS
= V
GS
,
V
DS
= V
GS
,
I
D
= 10 mA, Referenced to 25
°
C
I
D
= 250 uA, Referenced to 25
°
C
V
GS
= 10 V,
I
D
= 8.2 A
V
GS
= 10 V, I
D
= 8.2 A, T
J
= 125
°
C
V
GS
= 4.5 V,
I
D
= 7.6 A
V
GS
= 10 V,
I
D
= 6.9 A
V
GS
= 10 V, I
D
= 6.9 A, T
J
= 125
°
C
V
GS
= 4.5 V,
I
D
= 6.2 A
V
GS
= 10 V,
V
DS
= 5 V
I
D
= 1 mA
I
D
= 250 μA
Q2
Q1
1
1
1.9
1.9
3
3
V
V
GS(th)
T
J
Gate Threshold Voltage
Temperature Coefficient
Q2
Q1
–3.2
–4.2
mV/
°
C
Q2
17
23
21
22
30
27
22
36
28
27
38
34
R
DS(on)
Static Drain-Source
On-Resistance
Q1
m
I
D(on)
On-State Drain Current
Q2
Q1
Q2
Q1
30
20
A
S
g
FS
Forward Transconductance
V
DS
= 5 V,
V
DS
= 5 V,
I
D
= 8.2 A
I
D
= 6.9 A
25
21
Dynamic Characteristics
C
iss
Input Capacitance
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
570
600
180
150
70
70
2.8
2.2
pF
pF
pF
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
V
= 15 V,
f = 1.0 MHz
V
GS
= 0 V,
R
G
Gate Resistance
4.9
3.8
Switching Characteristics
(Note 2)
t
d(on)
Turn-On Delay Time
t
r
Turn-On Rise Time
t
d(off)
Turn-Off Delay Time
t
f
Turn-Off Fall Time
t
d(on)
Turn-On Delay Time
t
r
Turn-On Rise Time
t
d(off)
Turn-Off Delay Time
t
f
Turn-Off Fall Time
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
10
9
5
4
26
23
3
3
11
10
15
9
16
14
6
4
19
18
10
8
42
32
6
6
20
19
27
18
29
25
12
8
ns
ns
ns
ns
ns
ns
ns
ns
V
DD
= 15 V,
V
GS
= 10V, R
GEN
= 6
I
D
= 1 A,
V
DD
= 15 V,
V
GS
= 4.5 V, R
GEN
= 6
I
D
= 1 A,
F
相關(guān)PDF資料
PDF描述
FDS6900AS_NL Dual N-Ch PowerTrench SyncFET
FDS6900S Dual N-Ch PowerTrench SyncFet⑩
FDS6910 Dual N-Channel Logic Level PowerTrench MOSFET
FDS6912A Dual N-Channel, Logic Level, PowerTrenchTM MOSFET
FDS6912 Dual N-Channel Logic Level PWM Optimized PowerTrench MOSFET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
FDS6900AS_NL 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Dual N-Ch PowerTrench SyncFET
FDS6900S 功能描述:MOSFET Dual NCh PowerTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDS6910 功能描述:MOSFET Dual N-Ch LogicLevel PowerTrench MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDS6910-CUT TAPE 制造商:FAIRCHILD 功能描述:FDS6910 Series 30V 13 mOhm Dual N-Channel Logic Level PowerTrench Mosfet- SOIC-8
FDS6911 功能描述:MOSFET LOW_VOLTAGE RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。

采購需求

(若只采購一條型號，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進入我的后臺，查看報價

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進入我的后臺，查看報價

*型號 *數(shù)量 廠商 批號 封裝
添加更多采購

我的聯(lián)系方式

*
*
*