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參數(shù)資料
| 型號： | FDS6900AS |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | Dual N-Ch PowerTrench SyncFET |
| 中文描述： | 8200 mA, 30 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | SO-8 |
| 文件頁數(shù)： | 1/10頁 |
| 文件大?。?/td> | 183K |
| 代理商： | FDS6900AS |
May 2005
FDS6900AS
Dual N-Ch PowerTrench
SyncFET
General Description
2005 Fairchild Semiconductor Corporation
FDS6900AS Rev
B
(X)
The FDS6900AS is designed to replace two single SO-
8 MOSFETs and Schottky diode in synchronous DC:DC
power supplies that provide various peripheral voltages
for notebook computers and other battery powered
electronic devices. FDS6900AS contains two unique
30V, N-channel, logic level, PowerTrench MOSFETs
designed to maximize power conversion efficiency.
The high-side switch (Q1) is designed with specific
emphasis on reducing switching losses while the low-
side switch (Q2) is optimized to reduce conduction
losses. Q2 also includes an integrated Schottky diode
using Fairchild’s monolithic SyncFET technology.
Features
Q2
:
Optimized to minimize conduction losses
Includes SyncFET Schottky body diode
R
DS(on)
= 22m
@ V
GS
= 10V
R
DS(on)
= 28m
@ V
GS
= 4.5V
8.2A, 30V
Q1
:
Optimized for low switching losses
Low Gate Charge (11nC typical)
R
DS(on)
= 27m
@ V
GS
= 10V
R
DS(on)
= 34m
@ V
GS
= 4.5V
6.9A, 30V
100% R
G
(Gate Resistance) Tested
8
1
7
2
6
3
5
4
Dual N-Channel SyncFet
Q1
Q2
Absolute Maximum Ratings
T
A
= 25°C unless otherwise noted
Symbol
Parameter
Q2
Q1
Units
V
DSS
V
GSS
I
D
P
D
T
J
, T
STG
Drain-Source Voltage
Gate-Source Voltage
Drain Current - Continuous
Power Dissipation for Dual Operation
Power Dissipation for Single Operation
30
±
20
8.2
30
30
±
20
6.9
20
V
V
A
W
(Note 1a)
- Pulsed
2
1.6
1
0.9
(Note 1a)
(Note 1b)
(Note 1c)
Operating and Storage Junction Temperature Range
–55 to +150
°
C
Thermal Characteristics
R
θ
JA
Thermal Resistance, Junction-to-Ambient
R
θ
JC
Thermal Resistance, Junction-to-Case
(Note 1a)
78
40
°
C/W
°
C/W
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
FDS6900AS
FDS6900AS
FDS6900AS
FDS6900AS_NL
(Note 4)
Reel Size
13”
13”
Tape width
12mm
12mm
Quantity
2500 units
2500 units
D
S
SO-
G
G1
S1D2
S1D2
S1D2
D1
D1G2S2
Pin 1
SO-8
F
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| FDS6900AS_NL | Dual N-Ch PowerTrench SyncFET |
| FDS6900S | Dual N-Ch PowerTrench SyncFet⑩ |
| FDS6910 | Dual N-Channel Logic Level PowerTrench MOSFET |
| FDS6912A | Dual N-Channel, Logic Level, PowerTrenchTM MOSFET |
| FDS6912 | Dual N-Channel Logic Level PWM Optimized PowerTrench MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FDS6900AS_NL | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Dual N-Ch PowerTrench SyncFET |
| FDS6900S | 功能描述:MOSFET Dual NCh PowerTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDS6910 | 功能描述:MOSFET Dual N-Ch LogicLevel PowerTrench MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDS6910-CUT TAPE | 制造商:FAIRCHILD 功能描述:FDS6910 Series 30V 13 mOhm Dual N-Channel Logic Level PowerTrench Mosfet- SOIC-8 |
| FDS6911 | 功能描述:MOSFET LOW_VOLTAGE RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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