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參數(shù)資料
| 型號(hào)： | FDS6890A |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | Dual N-Channel 2.5V Specified PowerTrenchTM MOSFET |
| 中文描述： | 7.5 A, 20 V, 0.034 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | SOIC-8 |
| 文件頁(yè)數(shù)： | 1/8頁(yè) |
| 文件大小： | 241K |
| 代理商： | FDS6890A |
F
FDS6890A Rev. C
FDS6890A
Dual N-Channel 2.5V Specified PowerTrench
TM
MOSFET
General Description
These N-Channel 2.5V specified MOSFETs are
produced using Fairchild Semiconductor's advanced
PowerTrench process that has been especially tailored
to minimize the on-state resistance and yet maintain
low gate charge for superior switching performance.
Features
7.5 A, 20 V. R
DS(ON)
= 0.018
@ V
GS
= 4.5 V
R
DS(ON
)
= 0.022
@ V
GS
= 2.5 V.
Low gate charge (23nC typical).
Fast switching speed.
High performance trench technology for extremely
low R
DS(ON
)
.
High power and current handling capability.
1999 Fairchild Semiconductor Corporation
Absolute Maximum Ratings
T
A
=25
o
C unless otherwise noted
Symbol
V
DSS
V
GSS
I
D
Parameter
Ratings
20
±
8
7.5
20
2.0
1.6
1.0
0.9
-55 to +150
Units
V
V
A
Drain-Source Voltage
Gate-Source Voltage
Drain Current
- Continuous
- Pulsed
(Note 1a)
Power Dissipation for Dual Operation
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
(Note 1c)
P
D
W
T
J
, T
stg
Operating and Storage Junction Temperature Range
°
C
Thermal Characteristics
R
θ
JA
Thermal Resistance, Junction-to-Ambient
(Note 1a)
R
θ
JC
Thermal Resistance, Junction-to-Case
(Note 1)
78
40
90
°
C/W
°
C/W
Package Marking and Ordering Information
Device Marking
Device
FDS6890A
FDS6890A
Reel Size
13
Tape Width
12mm
Quantity
2500 units
Applications
DC/DC converter
Motor drives
November 1999
1
5
7
8
2
3
4
6
D1
SO-8
D2
D2
D1
S1
S2
G1
G2
pin
1
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| FDS6892AZ | Dual N-Channel Logic Level PWM Optimized PowerTrench MOSFET |
| FDS6892 | Dual N-Channel Logic Level PWM Optimized PowerTrench MOSFET |
| FDS6892A | Dual N-Channel Logic Level PWM Optimized PowerTrench MOSFET |
| FDS6894 | Dual N-Channel Logic Level PWM Optimized PowerTrench MOSFET |
| FDS6894A | Dual N-Channel Logic Level PWM Optimized PowerTrench MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FDS6890A | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET DUAL NN SO-8 |
| FDS6892 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Dual N-Channel Logic Level PWM Optimized PowerTrench MOSFET |
| FDS6892A | 功能描述:MOSFET SO-8 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDS6892AZ | 功能描述:MOSFET SO-8 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDS6894 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Dual N-Channel Logic Level PWM Optimized PowerTrench MOSFET |
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