參數(shù)資料
型號: FDS4465
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: JFETs
英文描述: P-Channel 1.8V Specified PowerTrench MOSFET
中文描述: 13.5 A, 20 V, 0.0085 ohm, P-CHANNEL, Si, POWER, MOSFET
封裝: SO-8
文件頁數(shù): 4/5頁
文件大小: 137K
代理商: FDS4465
FDS4465 Rev C
1
(W)
Typical Characteristics
0
1
2
3
4
5
0
20
40
60
80
100
Q
g
, GATE CHARGE (nC)
-
G
,
I
D
= -13.5A
V
DS
= -5V
-10V
-15V
0
2000
4000
6000
8000
10000
0
5
10
15
20
-V
DS
, DRAIN TO SOURCE VOLTAGE (V)
C
C
ISS
C
OSS
C
RSS
f = 1 MHz
V
GS
= 0 V
Figure 7. Gate Charge Characteristics.
Figure 8. Capacitance Characteristics.
0.01
0.1
1
10
100
0.1
1
10
100
-V
DS
, DRAIN-SOURCE VOLTAGE (V)
-
D
,
DC
10s
1s
100ms
100
μ
s
R
DS(ON)
LIMIT
V
GS
= -4.5V
SINGLE PULSE
R
θ
JA
= 125
o
C/W
T
A
= 25
o
C
10ms
1ms
0
0.001
10
20
30
40
50
0.01
0.1
1
10
100
t
1
, TIME (sec)
P
SINGLE PULSE
R
θ
JA
= 125°C/W
T
A
= 25°C
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum
Power Dissipation.
0.001
0.01
0.1
1
0.0001
0.001
0.01
0.1
1
10
100
1000
t
1
, TIME (sec)
r
T
R
θ
JA
(t) = r(t) + R
θ
JA
R
θ
JA
= 125
o
C/W
T
J
- T
A
= P * R
θ
JA
(t)
Duty Cycle, D = t
1
/ t
2
P(pk)
t
1
t
2
SINGLE PULSE
0.01
0.02
0.05
0.1
0.2
D = 0.5
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
F
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