- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄375781 > FDS4465 (FAIRCHILD SEMICONDUCTOR CORP) P-Channel 1.8V Specified PowerTrench MOSFET PDF資料下載
參數(shù)資料
| 型號： | FDS4465 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | P-Channel 1.8V Specified PowerTrench MOSFET |
| 中文描述： | 13.5 A, 20 V, 0.0085 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 封裝： | SO-8 |
| 文件頁數(shù)： | 1/5頁 |
| 文件大?。?/td> | 137K |
| 代理商： | FDS4465 |
March 2003
2003 Fairchild Semiconductor Corporation
FDS4465 Rev C1
(W)
FDS4465
P-Channel 1.8V Specified PowerTrench
MOSFET
General Description
This P-Channel 1.8V specified MOSFET is a rugged
gate version of Fairchild Semiconductor’s advanced
PowerTrench process. It has been optimized for power
management applications with a wide range of gate
drive voltage (1.8V – 8V).
Applications
Power management
Load switch
Battery protection
Features
–13.5 A, –20 V. R
DS(ON)
= 8.5 m
@ V
GS
= –4.5 V
R
DS(ON)
= 10.5 m
@ V
GS
= –2.5 V
R
DS(ON)
= 14 m
@ V
GS
= –1.8 V
Fast switching speed
High performance trench technology for extremely
low R
DS(ON)
High current and power handling capability
D
D
S
SO-8
D
D
G
D
DD
SSS
G
Pin 1
SO-8
4
3
2
1
5
6
7
8
Absolute Maximum Ratings
T
A
=25
o
C unless otherwise noted
Symbol
Parameter
V
DSS
Drain-Source Voltage
V
GSS
Gate-Source Voltage
I
D
Drain Current – Continuous
– Pulsed
Power Dissipation for Single Operation
T
J
, T
STG
Operating and Storage Junction Temperature Range
Ratings
–20
±
8
–13.5
–50
2.5
1.5
1.2
–55 to +175
Units
V
V
A
W
(Note 1a)
(Note 1a)
(Note 1b)
P
D
(Note 1c)
°
C
Thermal Characteristics
R
θ
JA
Thermal Resistance, Junction-to-Ambient
R
θ
JA
Thermal Resistance, Junction-to-Ambient
R
θ
JC
Thermal Resistance, Junction-to-Case
(Note 1a)
50
125
25
°
C/W
°
C/W
°
C/W
(Note 1c)
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
FDS4465
FDS4465
Reel Size
13’’
Tape width
12mm
Quantity
2500 units
F
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| FDS4470 | 40V N-Channel PowerTrench MOSFET |
| FDS4480 | 40V N-Channel PowerTrench MOSFET |
| FDS4488 | 30V N-Channel PowerTrench MOSFET |
| FDS4501H | Complementary PowerTrench Half-Bridge MOSFET |
| FDS4559 | 60V Complementary PowerTrench MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FDS4465 | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET P SMD 8-SOIC 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET, P, SMD, 8-SOIC |
| FDS4465 | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET TRANSISTOR ROHS COMPLIANT:NO |
| FDS4465_F085 | 功能描述:MOSFET SO-8SNGLPCH20V/8V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDS4465_G | 制造商:Fairchild Semiconductor Corporation 功能描述:P-CHANNEL 1.8V SPECIFIED POWERTRENCH?? M 制造商:Fairchild 功能描述:P-Channel 1.8V Specified PowerTrenchR MOSFET |
| FDS4465-CUT TAPE | 制造商:FAIRCHILD 功能描述:FDS4465 Series 20 V 8.5 mOhm P-Channel 1.8V Specified PowerTrench Mosfet SOIC-8 |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。