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參數(shù)資料
| 型號： | FDS4465 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | P-Channel 1.8V Specified PowerTrench MOSFET |
| 中文描述： | 13.5 A, 20 V, 0.0085 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 封裝： | SO-8 |
| 文件頁數(shù)： | 2/5頁 |
| 文件大?。?/td> | 137K |
| 代理商： | FDS4465 |
FDS4465 Rev C
1
(W)
Electrical Characteristics
T
A
= 25°C unless otherwise noted
Test Conditions
Symbol
Parameter
Min
Typ Max Units
Off Characteristics
BV
DSS
Drain–Source Breakdown Voltage
BV
DSS
T
J
Coefficient
I
DSS
Zero Gate Voltage Drain Current
I
GSSF
Gate–Body Leakage, Forward
I
GSSR
Gate–Body Leakage, Reverse
V
GS
= 0 V, I
D
= –250
μ
A
–20
V
Breakdown Voltage Temperature
I
D
= –250
μ
A, Referenced to 25
°
C
–12
mV/
°
C
V
DS
= –16 V,
V
GS
= 8 V,
V
GS
= –8 V,
V
GS
= 0 V
V
DS
= 0 V
V
DS
= 0 V
–1
100
–100
μ
A
nA
nA
On Characteristics
V
GS(th)
Gate Threshold Voltage
V
GS(th)
T
J
Temperature Coefficient
R
DS(on)
Static Drain–Source
On–Resistance
(Note 2)
V
DS
= V
GS
, I
D
= –250
μ
A
I
D
= –250
μ
A, Referenced to 25
°
C
V
GS
= –4.5 V,
I
D
= –13.5 A
V
GS
= –2.5 V,
I
D
= –12 A
V
GS
= –1.8 V,
I
D
= –10.5 A
V
GS
=–4.5 V, I
D
=–13.5A, T
J
=125
°
C
V
GS
= –4.5 V,
V
DS
= –5 V
V
DS
= –5 V,
I
D
= –13.5 A
–0.4
–0.6
–1.5
V
Gate Threshold Voltage
3
mV/
°
C
6.7
8.0
9.8
9.0
8.5
10.5
14
13
m
I
D(on)
g
FS
On–State Drain Current
Forward Transconductance
–50
A
S
70
Dynamic Characteristics
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
8237
1497
750
pF
pF
pF
V
DS
= –10 V,
f = 1.0 MHz
V
GS
= 0 V,
Switching Characteristics
(Note 2)
t
d(on)
Turn–On Delay Time
t
r
Turn–On Rise Time
t
d(off)
Turn–Off Delay Time
t
f
Turn–Off Fall Time
Q
g
Total Gate Charge
Q
gs
Gate–Source Charge
Q
gd
Gate–Drain Charge
20
24
300
140
86
20
11
36
38
480
224
120
ns
ns
ns
ns
nC
nC
nC
V
DD
= –10V,
V
GS
= –4.5 V,
I
D
= –1 A,
R
GEN
= 6
V
DS
= –10 V,
V
GS
= –4.5 V
I
D
= –13.5 A,
Drain–Source Diode Characteristics and Maximum Ratings
I
S
Maximum Continuous Drain–Source Diode Forward Current
Drain–Source Diode Forward
Voltage
–2.1
A
V
SD
V
GS
= 0 V,
I
S
= –2.1 A
(Note 2)
–0.6
–1.2
V
Notes:
1.
R
θ
JA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. R
θ
JC
is guaranteed by design while R
θ
CA
is determined by the user's board design.
a) 50 °C/W when
mounted on a 1in
2
pad of 2 oz copper
b) 105 °C/W when
mounted on a .04 in
2
pad of 2 oz copper
c) 125 °C/W when mounted on a
minimum pad.
Scale 1 : 1 on letter size paper
2.
Pulse Test: Pulse Width < 300
μ
s, Duty Cycle < 2.0%
F
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
| FDS4465 | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET P SMD 8-SOIC 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET, P, SMD, 8-SOIC |
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| FDS4465_F085 | 功能描述:MOSFET SO-8SNGLPCH20V/8V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDS4465_G | 制造商:Fairchild Semiconductor Corporation 功能描述:P-CHANNEL 1.8V SPECIFIED POWERTRENCH?? M 制造商:Fairchild 功能描述:P-Channel 1.8V Specified PowerTrenchR MOSFET |
| FDS4465-CUT TAPE | 制造商:FAIRCHILD 功能描述:FDS4465 Series 20 V 8.5 mOhm P-Channel 1.8V Specified PowerTrench Mosfet SOIC-8 |
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