參數(shù)資料
型號: FDS4501H
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: 小信號晶體管
英文描述: Complementary PowerTrench Half-Bridge MOSFET
中文描述: 9300 mA, 30 V, 2 CHANNEL, N AND P-CHANNEL, Si, SMALL SIGNAL, MOSFET
封裝: SO-8
文件頁數(shù): 1/8頁
文件大?。?/td> 1390K
代理商: FDS4501H
May 2001
FDS4501H
Complementary PowerTrench
ò
Half-Bridge MOSFET
2001 Fairchild Semiconductor Corporation
FDS4501H Rev C(W)
General Description
This complementary MOSFET half-bridge device is
produced using Fairchild’s advanced PowerTrench
process that has been especially tailored to minimize
the on-state resistance and yet maintain low gate
charge for superior switching performance.
Applications
DC/DC converter
Power management
Load switch
Battery protection
Features
Q1
:
N-Channel
9.3A, 30V
R
DS(on)
= 18 m
@ V
GS
= 10V
R
DS(on)
= 23 m
@ V
GS
= 4.5V
Q2
:
P-Channel
–5.6A, –20V R
DS(on)
= 46 m
@ V
GS
= –4.5V
R
DS(on)
= 63 m
@ V
GS
= –2.5V
D
D
SO-8
D
D
D
D
D
D
S1
G1
S2
G2
SO-8
4
3
2
1
5
6
7
8
Q1
Q2
Absolute Maximum Ratings
T
A
= 25°C unless otherwise noted
Symbol
V
DSS
V
GSS
I
D
P
D
T
J
, T
STG
Parameter
Q1
30
±
20
9.3
20
Q2
–20
±
8
–5.6
–20
Units
V
V
A
W
°
C
Drain-Source Voltage
Gate-Source Voltage
Drain Current - Continuous
Power Dissipation for Single Operation
Operating and Storage Junction Temperature Range
(Note 1a)
- Pulsed
(Note 1a)
(Note 1b)
(Note 1c)
2.5
1.2
1
–55 to +150
Thermal Characteristics
R
θ
JA
Thermal Resistance, Junction-to-Ambient
R
θ
JC
Thermal Resistance, Junction-to-Case
Package Marking and Ordering Information
Device Marking
Device
FDS4501H
FDS4501H
(Note 1a)
50
25
°
C/W
°
C/W
(Note 1)
Reel Size
13”
Tape width
12mm
Quantity
2500 units
F
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