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參數資料
| 型號： | FDS4480 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | 40V N-Channel PowerTrench MOSFET |
| 中文描述： | 10.8 A, 40 V, 0.012 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | SO-8 |
| 文件頁數： | 1/6頁 |
| 文件大?。?/td> | 88K |
| 代理商： | FDS4480 |
February 2002
2002 Fairchild Semiconductor Corporation
FDS4480 Rev D (W)
FDS4480
40V N-Channel PowerTrench
MOSFET
General Description
This
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers. It has been optimized for
low gate charge, low R
DS(ON)
and fast switching speed.
N-Channel
MOSFET
has
been
designed
Applications
DC/DC converter
Features
10.8 A, 40 V. R
DS(ON)
= 12 m
@ V
GS
= 10 V
Low gate charge (29 nC)
High performance trench technology for extremely
low R
DS(ON)
High power and current handling capability
D
D
S
SO-8
D
D
G
D
DD
SSS
G
Pin 1
SO-8
4
3
2
1
5
6
7
8
Absolute Maximum Ratings
T
A
=25
o
C unless otherwise noted
Symbol
Parameter
V
DSS
Drain-Source Voltage
V
GSS
Gate-Source Voltage
I
D
Drain Current – Continuous
– Pulsed
Power Dissipation for Single Operation
Ratings
40
+30/–20
10.8
45
2.5
1.4
1.2
–55 to +175
Units
V
V
A
W
(Note 1a)
(Note 1a)
(Note 1b)
P
D
(Note 1c)
T
J
, T
STG
Operating and Storage Junction Temperature Range
°
C
Thermal Characteristics
R
θ
JA
Thermal Resistance, Junction-to-Ambient
R
θ
JA
Thermal Resistance, Junction-to-Ambient
R
θ
JC
Thermal Resistance, Junction-to-Case
(Note 1a)
50
125
25
°
C/W
°
C/W
°
C/W
(Note 1c)
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
FDS4480
FDS4480
Reel Size
13’’
Tape width
12mm
Quantity
2500 units
F
相關PDF資料 |
PDF描述 |
|---|---|
| FDS4488 | 30V N-Channel PowerTrench MOSFET |
| FDS4501H | Complementary PowerTrench Half-Bridge MOSFET |
| FDS4559 | 60V Complementary PowerTrench MOSFET |
| FDS4672A | 40V N-Channel PowerTrench MOSFET |
| FDS4675 | 40V P-Channel PowerTrench MOSFET |
相關代理商/技術參數 |
參數描述 |
|---|---|
| FDS4480_Q | 功能描述:MOSFET SO-8 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDS4488 | 功能描述:MOSFET SO-8 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDS4501H | 功能描述:MOSFET SO-8 COMP N-P-CH RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDS4559 | 功能描述:MOSFET 60V/-60V N/P RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDS4559 | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET |
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