參數(shù)資料
型號(hào): FDS2672
廠(chǎng)商: FAIRCHILD SEMICONDUCTOR CORP
元件分類(lèi): JFETs
英文描述: N-Channel UltraFET Trench㈢ MOSFET 200V, 3.9A, 70mз
中文描述: 3.9 A, 200 V, 0.148 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝: ROHS COMPLIANT, SO-8
文件頁(yè)數(shù): 4/6頁(yè)
文件大?。?/td> 360K
代理商: FDS2672
F
FDS2672 Rev. B
www.fairchildsemi.com
4
Figure 7.
0
8
16
24
32
40
0
2
4
6
8
10
V
DD
= 100V
V
DD
= 50V
V
G
,
Q
g
, GATE CHARGE(nC)
V
DD
= 150V
Gate Charge Characteristics
Figure 8.
0.1
1
10
100
10
100
1000
10000
f = 1MHz
V
GS
= 0V
C
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
C
rss
C
oss
C
iss
Capacitance vs Drain to Source Voltage
Figure 9.
0.01
0.1
1
10
100
1000
0.1
1
10
T
J
= 25
o
C
T
J
= 125
o
C
t
AV
, TIME IN AVALANCHE(ms)
I
A
,
(
A
)
Unclamped Inductive Switching
Capability
Figure 10.
25
50
75
100
125
150
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
R
θ
JA
= 50
o
C/W
V
GS
= 6V
V
GS
= 10V
I
D
,
T
A
, AMBIENT TEMPERATURE
(
o
C
)
Ambient Continuous Drain Current vs
Case Temperature
Figure 11.
0.01
0.1
1
10
100
1000
10
-3
10
-2
10
-1
10
0
10
1
10
2
1ms
100us
10ms
100ms
1s
DC
SINGLE PULSE
T
J
= MAX RATED
TA = 25
O
C
OPERATION IN THIS
AREA MAY BE
LIMITED BY r
DS(on)
LIMITED BY
PACKAGE
D
,
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Forward Bias Safe Operating Area
Figure 12. Single
10
-4
10
-3
10
t, PULSE WIDTH (s)
-2
10
-1
10
0
10
1
10
2
10
3
1
10
100
1000
V
GS
= 10V
SINGLE PULSE
P
(
P
)
,
3000
T
A
= 25
o
C
FOR TEMPERATURES
ABOVE 25
o
C DERATE PEAK
I = I
25
150
-----------------------
Pulse Maximum Power
Dissipation
Typical Characteristics
T
J
= 25°C unless otherwise noted
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
FDS2672 制造商:Fairchild Semiconductor Corporation 功能描述:N CHANNEL MOSFET
FDS2672_10 制造商:FAIRCHILD 制造商全稱(chēng):Fairchild Semiconductor 功能描述:N-Channel UltraFET Trench?? MOSFET
FDS2672_F085 功能描述:MOSFET 200V3.9A 70OHMNCH ULTRAFET TRENCH RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDS2734 功能描述:MOSFET 250V 3.0A 117 OHM NCH ULTRAFE RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDS30 制造商:Hubbell Wiring Device-Kellems 功能描述:FUSED DISCO SW, 3P, 30A