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參數(shù)資料
| 型號： | FDS2672 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | N-Channel UltraFET Trench㈢ MOSFET 200V, 3.9A, 70mз |
| 中文描述： | 3.9 A, 200 V, 0.148 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, SO-8 |
| 文件頁數(shù)： | 3/6頁 |
| 文件大?。?/td> | 360K |
| 代理商： | FDS2672 |
F
FDS2672 Rev. B
www.fairchildsemi.com
3
Typical Characteristics
T
J
= 25°C unless otherwise noted
Figure 1. On Region Characteristics
0
1
2
3
4
0
10
20
30
40
50
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5%MAX
V
GS
= 4.5V
V
GS
= 5V
V
GS
= 6V
V
GS
=
10V
I
D
,
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
Figure 2. Normalized
Current and Gate Voltage
0
5
10
15
20
25
30
35
40
45
50
0.5
1.0
1.5
2.0
2.5
3.0
V
GS
=
4.5V
V
GS
= 5V
V
GS
=
6V
V
GS
=
10V
I
D
, DRAIN CURRENT(A)
N
D
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5%MAX
On-Resistance vs Drain
Figure 3.
-50
-25
0
25
50
75
100
125
150
0.4
1.0
1.6
2.2
2.8
I
D
= 3.9A
V
GS
= 10V
N
T
J
, JUNCTION TEMPERATURE
(
o
C
)
Normalized On Resistance vs Junction
Temperature
Figure 4.
3.0
4.5
6.0
7.5
9.0
40
60
80
100
120
140
160
180
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5%MAX
T
J
= 150
o
C
T
J
= 25
o
C
I
D
= 3.9A
r
D
,
S
(
m
)
V
GS
, GATE TO SOURCE VOLTAGE (V)
10
On-Resistance vs Gate to Source
Voltage
Figure 5. Transfer Characteristics
2
3
4
5
6
0
5
10
15
20
25
30
V
DD
= 10V
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5%MAX
T
J
= - 55
o
C
T
J
= 25
o
C
T
J
= 150
o
C
I
D
,
V
GS
, GATE TO SOURCE VOLTAGE (V)
Figure 6.
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1E-3
0.01
0.1
1
10
100
T
J
= -55
o
C
T
J
= 25
o
C
T
J
= 150
o
C
V
GS
= 0V
I
S
,
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
Source to Drain Diode Forward
Voltage vs Source Current
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FDS2672 | 制造商:Fairchild Semiconductor Corporation 功能描述:N CHANNEL MOSFET |
| FDS2672_10 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel UltraFET Trench?? MOSFET |
| FDS2672_F085 | 功能描述:MOSFET 200V3.9A 70OHMNCH ULTRAFET TRENCH RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDS2734 | 功能描述:MOSFET 250V 3.0A 117 OHM NCH ULTRAFE RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDS30 | 制造商:Hubbell Wiring Device-Kellems 功能描述:FUSED DISCO SW, 3P, 30A |
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