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參數(shù)資料
| 型號： | FDS2670 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 200V N-Channel PowerTrench MOSFET |
| 中文描述： | 3000 mA, 200 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | SOIC-8 |
| 文件頁數(shù)： | 2/8頁 |
| 文件大小： | 339K |
| 代理商： | FDS2670 |
FDS2670 Rev B(W)
Electrical Characteristics
T
A
= 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BV
DSS
Drain–Source Breakdown Voltage
BV
DSS
===
T
J
Coefficient
I
DSS
Zero Gate Voltage Drain Current
I
GSSF
Gate–Body Leakage, Forward
I
GSSR
Gate–Body Leakage, Reverse
V
GS
= 0 V, I
D
= 250
μ
A
I
D
= 250
μ
A, Referenced to 25
°
C
200
V
Breakdown Voltage Temperature
214
mV/
°
C
V
DS
= 160 V,
V
GS
= 20 V,
V
GS
= –20 V
V
GS
= 0 V
V
DS
= 0 V
V
DS
= 0 V
1
μ
A
nA
nA
100
–100
On Characteristics
V
GS(th)
Gate Threshold Voltage
V
GS(th)
===
T
J
Temperature Coefficient
R
DS(on)
Static Drain–Source
On–Resistance
I
D(on)
On–State Drain Current
g
FS
Forward Transconductance
(Note 2)
V
DS
= V
GS
, I
D
= 250
μ
A
I
D
= 250
μ
A, Referenced to 25
°
C
2
4
4.5
V
Gate Threshold Voltage
–10
mV/
°
C
V
GS
= 10 V,
V
GS
=10 V, I
D
=3.0 A, T
J
=125
°
C
V
GS
= 10 V,
V
DS
= 10 V,
I
D
= 3.0 A
100
205
125
275
m
V
DS
= 10 V
I
D
= 3.0 A
20
A
S
15
Dynamic Characteristics
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
1228
112
17
pF
pF
pF
V
DS
= 100 V,
f = 1.0 MHz
V
GS
= 0 V,
Switching Characteristics
t
d(on)
Turn–On Delay Time
t
r
Turn–On Rise Time
t
d(off)
Turn–Off Delay Time
t
f
Turn–Off Fall Time
Q
g
Total Gate Charge
Q
gs
Gate–Source Charge
Q
gd
Gate–Drain Charge
(Note 2)
13
8
30
25
27
7
10
23
16
48
40
43
ns
ns
ns
ns
nC
nC
nC
V
DD
= 100 V,
V
GS
= 10 V,
I
D
= 1 A,
R
GEN
= 6
V
DS
= 100 V,
V
GS
= 10 V
I
D
= 3 A,
Drain–Source Diode Characteristics and Maximum Ratings
I
S
Maximum Continuous Drain–Source Diode Forward Current
Drain–Source Diode Forward
Voltage
2.1
A
V
SD
V
GS
= 0 V,
I
S
= 2.1 A
(Note 2)
0.7
1.2
V
Notes:
1.
R
JA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. R
θ
JC
is guaranteed by design while R
θ
CA
is determined by the user's board design.
a) 50°/W when
mounted on a 1in
2
pad of 2 oz copper
b) 105°/W when
mounted on a 0.04
in
pad of 2 oz
copper
c) 125°/W when mounted on a
minimum pad.
Scale 1 : 1 on letter size paper
2.
Pulse Test: Pulse Width < 300
μ
s, Duty Cycle < 2.0%
F
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FDS2670 | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET TRANSISTOR ROHS COMPLIANT:NO |
| FDS2670_01 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:200V N-Channel PowerTrench MOSFET |
| FDS2672 | 功能描述:MOSFET 200V 3.9A 70OHM NCH ULTRAFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDS2672 | 制造商:Fairchild Semiconductor Corporation 功能描述:N CHANNEL MOSFET |
| FDS2672_10 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel UltraFET Trench?? MOSFET |
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