參數(shù)資料
型號: FDMS9620S
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: JFETs
英文描述: Dual N-Channel PowerTrench㈢ MOSFET Q1: 30V, 16A, 21.5mヘ Q2: 30V, 18A, 13mヘ
中文描述: 7.5 A, 30 V, 0.0215 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
封裝: ROHS COMPLIANT, POWER 56, 8 PIN
文件頁數(shù): 6/9頁
文件大小: 286K
代理商: FDMS9620S
F
M
2007 Fairchild Semiconductor Corporation
FDMS9620S Rev.D
www.fairchildsemi.com
Typical Characteristics (Q2 SyncFET)
Figure 12. On-Region Characteristics
Figure 13.
Normalized on-Resistance vs Drain
Current and Gate Voltage
Figure 14. Normalized On-Resistance
vs Junction Temperature
Figure 15. On-Resistance vs Gate to
Source Voltage
Figure 16. Transfer Characteristics
Figure 17. Source to Drain Diode
Forward Voltage vs Source Current
0.0
0.5
1.0
1.5
2.0
2.5
0
10
20
30
40
50
60
V
GS
=
3V
V
GS
= 4.5V
V
GS
=
4.0V
V
GS
=
3.5V
V
GS
= 10V
PULSE DURATION = 300
μ
s
DUTY CYCLE = 2.0%MAX
V
GS
= 6V
I
D
,
D
V
DS
,
DRAIN TO SOURCE VOLTAGE (V)
0
10
20
30
40
50
60
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
2.6
2.8
V
GS
=
10V
V
GS
=
6.0V
V
GS
=
4.0V
PULSE DURATION = 300
μ
s
DUTY CYCLE = 2.0%MAX
N
D
I
D
, DRAIN CURRENT(A)
V
GS
=3.5V
V
GS
=
4.5V
-50
-25
0
25
50
75
100
125
150
0.6
0.8
1.0
1.2
1.4
1.6
1.8
I
D
= 10A
V
GS
=10V
N
T
J
,
JUNCTION TEMPERATURE
(
o
C
)
2
4
6
8
10
0
10
20
30
40
50
60
PULSE DURATION = 300
μ
s
DUTY CYCLE = 2.0%MAX
T
J
= 125
o
C
T
J
= 25
o
C
I
D
= 5A
r
D
,
D
S
(
m
Ω
)
V
GS
,
GATE TO SOURCE VOLTAGE (V)
1
2
3
4
5
0
10
20
30
40
50
60
V
DS
= 5V
PULSE DURATION = 300
μ
s
DUTY CYCLE = 2.0%MAX
T
J
=125
o
C
T
J
= -55
o
C
T
J
= 25
o
C
I
D
,
V
GS
, GATE TO SOURCE VOLTAGE (V)
0.0
0.2
0.4
0.6
0.8
0.001
0.01
0.1
1
10
T
J
= -55
o
C
T
J
= 25
o
C
T
J
= 125
o
C
V
GS
= 0V
I
S
,
R
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
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