參數(shù)資料
型號: FDMS9620S
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: JFETs
英文描述: Dual N-Channel PowerTrench㈢ MOSFET Q1: 30V, 16A, 21.5mヘ Q2: 30V, 18A, 13mヘ
中文描述: 7.5 A, 30 V, 0.0215 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
封裝: ROHS COMPLIANT, POWER 56, 8 PIN
文件頁數(shù): 2/9頁
文件大?。?/td> 286K
代理商: FDMS9620S
F
M
2007 Fairchild Semiconductor Corporation
FDMS9620S Rev.D
www.fairchildsemi.com
Electrical Characteristics
T
J
= 25°C unless otherwise noted
Off Characteristics
On Characteristics
Dynamic Characteristics
Switching Characteristics
Symbol
Parameter
Test Conditions
Type
Min
Typ
Max
Units
BV
DSS
Drain to Source Breakdown Voltage
I
D
= 250
μ
A, V
GS
= 0V
I
D
= 1mA, V
GS
= 0V
I
D
= 250
μ
A, referenced to 25°C
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
30
30
V
Δ
BV
DSS
Δ
T
J
Breakdown Voltage Temperature
Coefficient
23
23
mV/°
C
I
DSS
Zero Gate Voltage Drain Current
V
DS
= 24V, V
GS
= 0V
1
500
±100
±100
μ
A
I
GSS
Gate to Source Leakage Current
V
GS
= ±20V, V
DS
= 0V
nA
nA
V
GS(th)
Gate to Source Threshold Voltage
V
GS
= V
DS
, I
D
= 250
μ
A
V
GS
= V
DS
, I
D
= 1mA
I
D
= 250
μ
A, referenced to 25°C
I
D
= 1mA, referenced to 25°C
V
GS
= 10V, I
D
= 7.5A
V
GS
= 4.5V, I
D
= 6.5A
V
GS
= 10V, I
D
= 7.5A , T
J
= 125°C
V
GS
= 10V, I
D
= 10A
V
GS
= 4.5V, I
D
= 8.5A
V
GS
= 10V, I
D
= 10A , T
J
= 125°C
V
DS
= 10V, I
D
= 7.5A
V
DS
= 10V, I
D
= 10A
Q1
Q2
Q1
Q2
1
1
1.6
1.6
-4
-4
18
23
25
9
13
14
25
27
3
3
V
Δ
V
GS(th)
Δ
T
J
Gate to Source Threshold Voltage
Temperature Coefficient
mV/°C
r
DS(on)
Drain to Source On Resistance
Q1
21.5
29.5
32
13
17
22
m
Ω
Q2
g
FS
Forward Transconductance
Q1
Q2
S
C
iss
Input Capacitance
Q1:
V
DS
= 15V, V
GS
= 0V, f = 1MHZ
Q2:
V
DS
= 15V, V
GS
= 0V, f = 1MHZ
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
500
700
100
500
65
100
0.9
1.8
665
935
135
665
100
150
pF
C
oss
Output Capacitance
pF
C
rss
Reverse Transfer Capacitance
pF
R
g
Gate Resistance
f = 1MHz
Ω
t
d(on)
Turn-On Delay Time
Q1:
V
DD
= 15V, I
D
= 1A, R
GEN
= 6
Ω
Q2:
V
DD
= 15V, I
D
= 1A, R
GEN
= 6
Ω
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
11
15
7
13
23
27
2.3
7
10
18
0.7
1.5
20
27
14
24
37
44
10
14
14
25
ns
t
r
Rise Time
ns
t
d(off)
Turn-Off Delay Time
ns
t
f
Fall Time
ns
Q
g
Total Gate Charge
Q1
V
DD
= 15V, V
GS
= 10V ,I
D
= 7.5A
Q2
V
DD
= 15V, V
GS
= 10V ,I
D
= 10A
nC
Q
gs
Gate to Source Gate Charge
nC
Q
gd
Gate to Drain “Miller” Charge
Q1
Q2
1.7
2.6
nC
相關(guān)PDF資料
PDF描述
FDMW2512NZ Monolithic Common Drain N-Channel 2.5V Specified PowerTrench MOSFET
FDN302 P-Channel 2.5V Specified PowerTrench MOSFET
FDN302P CAP CER 2.2UF 16V 10% X5R 1206
FDN304PZ P-Channel 1.8V Specified PowerTrench MOSFET
FDN304P P-Channel 1.8V Specified PowerTrench MOSFET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
FDMS9620S_07 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Dual N-Channel PowerTrench㈢ MOSFET
FDMW2512NZ 功能描述:MOSFET 2.5V NCH MONOLITHIC COMON DR RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDN 304P 制造商:Fairchild Semiconductor 功能描述:Bulk
FDN 337N 制造商:Fairchild Semiconductor 功能描述:Bulk
FDN 338P 制造商:Fairchild Semiconductor 功能描述:Bulk