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參數(shù)資料
| 型號(hào)： | FDMS9620S |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | Dual N-Channel PowerTrench㈢ MOSFET Q1: 30V, 16A, 21.5mヘ Q2: 30V, 18A, 13mヘ |
| 中文描述： | 7.5 A, 30 V, 0.0215 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, POWER 56, 8 PIN |
| 文件頁(yè)數(shù)： | 4/9頁(yè) |
| 文件大?。?/td> | 286K |
| 代理商： | FDMS9620S |
F
M
2007 Fairchild Semiconductor Corporation
FDMS9620S Rev.D
www.fairchildsemi.com
Typical Characteristics (Q1 N-Channel)
T
J
= 25°C unless otherwise noted
Figure 1. On Region Characteristics
Figure 2. Normalized On-Resistance
vs Drain Current and Gate Voltage
Figure 3. Normalized On Resistance
vs Junction Temperature
Figure 4. On-Resistance vs Gate to
Source Voltage
Figure 5. Transfer Characteristics
Figure 6. Source to Drain Diode
Forward Voltage vs Source Current
0
1
2
3
4
0
10
20
30
40
50
60
V
GS
= 4.5V
V
GS
=
4.0V
V
GS
=
3.5V
V
GS
= 10V
V
GS
= 6V
PULSE DURATION = 300
μ
s
DUTY CYCLE = 2.0%MAX
V
GS
= 3V
I
D
,
D
V
DS
,
DRAIN TO SOURCE VOLTAGE
(
V
)
0
10
20
30
40
50
60
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
2.6
2.8
V
GS
=
10V
V
GS
=
6.0V
V
GS
=
4.0V
PULSE DURATION = 300
μ
s
DUTY CYCLE = 2.0%MAX
N
D
I
D
,
DRAIN CURRENT(A)
V
GS
=3.5V
V
GS
= 3V
V
GS
=
4.5V
-50
-25
0
25
50
75
100
125
150
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
1.5
1.6
I
D
= 7.5A
V
GS
=10V
N
T
J
, JUNCTION TEMPERATURE
(
o
C
)
2
4
6
8
10
10
20
30
40
50
60
70
PULSE DURATION = 300
μ
s
DUTY CYCLE = 2.0%MAX
T
J
= 125
o
C
T
J
= 25
o
C
I
D
= 3.8A
r
D
D
S
(
m
Ω
)
V
GS
,
GATE TO SOURCE VOLTAGE (V)
1
2
3
4
5
0
10
20
30
40
V
DS
= 5V
PULSE DURATION = 300
μ
s
DUTY CYCLE = 2.0%MAX
T
J
=125
o
C
T
J
= -55
o
C
T
J
= 25
o
C
I
D
,
D
V
GS
,
GATE TO SOURCE VOLTAGE (V)
0.2
0.4
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
0.6
0.8
1.0
1.2
1.4
0.001
0.01
0.1
1
10
T
J
= -55
o
C
T
J
= 25
o
C
T
J
= 125
o
C
V
GS
= 0V
I
S
,
R
40
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FDMS9620S_07 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Dual N-Channel PowerTrench㈢ MOSFET |
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