參數(shù)資料
型號: FDMS8690
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: JFETs
英文描述: N-Channel PowerTrench MOSFET
中文描述: 27 A, 100 V, 0.009 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝: ROHS COMPLIANT, POWER 56, 8 PIN
文件頁數(shù): 2/7頁
文件大?。?/td> 468K
代理商: FDMS8690
FDMS8690 Rev B(W)
www.fairchildsemi.com
Electrical Characteristics
T
A
= 25°C unless otherwise noted
Test Conditions
Symbol
Parameter
Min
Typ Max Units
Off Characteristics
BV
DSS
BV
DSS
T
J
I
DSS
I
GSS
Drain–Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate–Body Leakage
V
GS
= 0 V,
I
D
= 250
μ
A
30
V
I
D
= 250
μ
A, Referenced to 25
°
C
34
mV/
°
C
V
DS
= 24 V,
V
GS
=
±
20 V,
V
GS
= 0 V
V
DS
= 0 V
1
μ
A
nA
±
100
On Characteristics
V
GS(th)
V
GS(th)
T
J
r
DS(on)
(Note 2)
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
V
DS
= V
GS
,
I
D
= 250
μ
A, Referenced to 25
°
C
V
GS
= 10 V,
I
D
= 19.8 A
V
GS
= 4.5 V,
I
D
= 11.5 A
V
GS
= 10 V, I
D
=19.8A, T
J
= 125
°
C
I
D
= 250
μ
A
1
1.6
3
V
–4.5
mV/
°
C
7.4
9.9
10.6
9
12.5
13.3
m
Dynamic Characteristics
C
iss
Input Capacitance
C
oss
Output Capacitance
1260
535
1680
715
pF
pF
C
rss
R
G
Reverse Transfer Capacitance
Gate Resistance
V
DS
= 15 V,
f = 1.0 MHz
V
GS
= 0 V,
80
1.1
120
pF
f = 1.0 MHz
t
d(on)
t
r
t
d(off)
t
f
Q
g(TOT)
Q
g(5)
Q
gs
Q
gd
Turn–On Delay Time
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
Total Gate Charge at V
GS
= 10V
Total Gate Charge at V
GS
= 5V
Gate–Source Charge
Gate–Drain Charge
8
16
10
42
35
27
14
ns
ns
ns
ns
nC
nC
nC
nC
1.8
26
19
18.8
10
3.5
2.9
V
DD
= 15 V,
V
GS
= 10 V,
I
D
= 1 A,
R
GEN
= 6
V
DS
= 15 V,
I
D
= 14 A
Drain–Source Diode Characteristics
Drain–Source Diode Forward
Voltage
t
rr
Diode Reverse Recovery Time
V
SD
V
GS
= 0 V,
I
S
= 2.1 A
(Note 2)
0.7
1.2
V
45
ns
Q
rr
Diode Reverse Recovery Charge
I
F
= 14 A,
di/dt = 100 A/μs
33
nC
Notes:
1.
R
θ
JA
is determined with the device mounted on a 1in
2
pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R
θ
JC
is guaranteed by design
while R
θ
CA
is determined by the user's board design.
a)
44°C/W when
mounted on a 1in
2
pad
of 2 oz copper
b)
115 °C/W when mounted
on a minimum pad of 2 oz
copper
Scale 1 : 1 on letter size paper
2.
Pulse Test: Pulse Width < 300
μ
s, Duty Cycle < 2.0%
F
M
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