參數(shù)資料
型號(hào)： FDMS8674
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類(lèi)： JFETs
英文描述： Diode; Antenna switching; VR (V): 30; IF (mA): 100; Pd (mW): 150; rf (ohm) max: 2.5typ 1.5; Condition IF at rf (mA): 2.0 10; Condition f at rf (MHz): 100; VF (V) max: 1; Condition IF at VF (mA): 10; C (pF) max: 0.31; Condition VR at C (V): 1; Condition f at C (MHz): 1; Package: SFP
中文描述： 17 A, 30 V, 0.005 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝： ROHS COMPLIANT, MO-240AA, POWER 56, 8 PIN
文件頁(yè)數(shù)： 2/6頁(yè)
文件大?。?/td> 229K
代理商： FDMS8674
F
www.fairchildsemi.com
2
2007 Fairchild Semiconductor Corporation
FDMS8674 Rev.B
Electrical Characteristics
T
J
= 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BV
DSS
BV
DSS
T
J
I
DSS
I
GSS
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
I
D
= 250
μ
A, V
GS
= 0V
30
V
I
D
= 250
μ
A, referenced to 25°C
25
mV/°C
V
DS
= 24V, V
GS
= 0V
V
GS
= ±20V, V
DS
= 0V
1
μ
A
nA
±100
On Characteristics
V
GS(th)
V
GS(th)
T
J
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
V
GS
= V
DS
, I
D
= 250
μ
A
1.0
1.8
3.0
V
I
D
= 250
μ
A, referenced to 25°C
-6
mV/°C
r
DS(on)
Static Drain to Source On Resistance
V
GS
= 10V, I
D
= 17A
V
GS
= 4.5V, I
D
= 14A
V
GS
= 10V, I
D
= 17A, T
J
= 125°C
V
DD
= 10V, I
D
= 17A
4.1
5.8
5.8
87
5.0
8.0
8.3
m
g
FS
Forward Transconductance
S
Dynamic Characteristics
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
R
g
Gate Resistance
V
DS
= 15V, V
GS
= 0V,
f = 1MHz
1745
860
130
0.9
2320
1145
195
pF
pF
pF
f = 1MHz
Switching Characteristics
t
d(on)
Turn-On Delay Time
t
r
Rise Time
t
d(off)
Turn-Off Delay Time
t
f
Fall Time
Q
g
Total Gate Charge
Q
g
Total Gate Charge
Q
gs
Gate to Source Charge
Q
gd
Gate to Drain “Miller” Charge
V
DD
= 15V, I
D
= 17A,
V
GS
= 10V, R
GEN
= 6
11
4
26
3
26
14
4.8
3.5
20
10
42
10
37
20
ns
ns
ns
ns
nC
nC
nC
nC
V
GS
= 0V to 10V
V
GS
= 0V to 5V
V
DD
= 15V,
I
D
= 17A
Drain-Source Diode Characteristics
V
SD
Source to Drain Diode Forward Voltage
V
GS
= 0V, I
S
= 2.1A (Note 2)
V
GS
= 0V, I
S
= 17A
0.7
0.8
40
30
1.2
1.2
64
48
V
V
ns
nC
t
rr
Q
rr
Reverse Recovery Time
Reverse Recovery Charge
I
F
= 17A, di/dt = 100A/
μ
s
NOTES:
1. R
is determined with the device mounted on a 1in
2
pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R
θ
JC
is
guaranteed by design while R
θ
CA
is determined by
the user's board design.
2. Pulse Test: Pulse Width < 30
0
μ
s, Duty cycle < 2.0%.
3. Starting T
J
= 25°C, L = 3mH, I
AS
= 11A, V
DD
= 30V, V
GS
= 10V.
b. 125°C/W when mounted on a
minimum pad of 2 oz copper.
a. 50°C/W when mounted on
a 1 in
pad of 2 oz copper.
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