參數(shù)資料
型號(hào): FDMS8660AS
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: JFETs
英文描述: N-Channel PowerTrench㈢ SyncFET 30V, 49A, 2.1mヘ
中文描述: 28 A, 30 V, 0.0021 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝: ROHS COMPLIANT, POWER 56, 8 PIN
文件頁(yè)數(shù): 4/8頁(yè)
文件大小: 242K
代理商: FDMS8660AS
F
T
www.fairchildsemi.com
4
2007 Fairchild Semiconductor Corporation
FDMS8660AS Rev.C
Figure 7.
0
10
20
30
40
50
60
0
2
4
6
8
10
I
D
= 28A
V
DD
= 15V
V
DD
= 10V
V
G
,
Q
g
, GATE CHARGE(nC)
V
DD
= 20V
Gate Charge Characteristics
Figure 8.
0.1
1
10
100
1000
10000
30
f = 1MHz
V
GS
= 0V
C
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
C
rss
C
oss
C
iss
Capacitance vs Drain
to Source Voltage
Figure 9.
0.01
0.1
1
10
100
1000
1
10
T
J
= 25
o
C
T
J
= 125
o
C
t
AV
, TIME IN AVALANCHE(ms)
I
A
,
40
Unclamped Inductive
Switching Capability
Figure 10.
Current vs Case Temperature
25
50
75
100
125
150
0
30
60
90
120
150
180
R
θ
JC
= 1.2
o
C/W
V
GS
= 10V
V
GS
= 4.5V
I
D
,
D
T
C
,
CASE TEMPERATURE
(
o
C
)
Limited by Package
Maximum Continuous Drain
Figure 11. Forward Bias Safe
Operating Area
0.01
0.1
1
10
100
0.01
0.1
1
10
100
300
1ms
DC
10s
1s
100ms
10ms
D
,
V
DS
, DRAIN to SOURCE VOLTAGE (V)
THIS AREA IS
LIMITED BY r
DS(on)
SINGLE PULSE
T
J
= MAX RATED
R
θ
JA
= 125
o
C/W
T
A
= 25
o
C
Figure 12.
10
-3
10
-2
10
t, PULSE WIDTH (s)
-1
10
0
10
1
10
2
10
3
1
10
100
1000
10000
SINGLE PULSE
R
θ
JA
= 125
o
C/W
T
A
= 25
o
C
0.5
V
GS
= 10V
P
(
P
)
,
P
Single Pulse Maximum
Power Dissipation
Typical Characteristics
T
J
= 25°C unless otherwise noted
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