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參數(shù)資料
| 型號： | FDMS8660AS |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | N-Channel PowerTrench㈢ SyncFET 30V, 49A, 2.1mヘ |
| 中文描述： | 28 A, 30 V, 0.0021 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, POWER 56, 8 PIN |
| 文件頁數(shù)： | 3/8頁 |
| 文件大小： | 242K |
| 代理商： | FDMS8660AS |
F
T
www.fairchildsemi.com
3
2007 Fairchild Semiconductor Corporation
FDMS8660AS Rev.C
Typical Characteristics
T
J
= 25°C unless otherwise noted
Figure 1.
0.0
0.5
1.0
1.5
2.0
2.5
3.0
0
40
80
120
160
200
V
GS
= 4.0V
V
GS
=
10V
V
GS
=
4.5V
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5%MAX
V
GS
= 3.5V
V
GS
= 3.0V
I
D
,
D
V
DS
,
DRAIN TO SOURCE VOLTAGE (V)
On-Region Characteristics
Figure 2.
vs Drain Current and Gate Voltage
0
40
80
120
160
200
0.5
1.0
1.5
2.0
2.5
3.0
V
GS
= 4.0V
V
GS
=
3.5V
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5%MAX
N
D
I
D
,
DRAIN CURRENT(A)
V
GS
=
4.5V
V
GS
=
10V
Normalized On-Resistance
Figure 3. Normalized On- Resistance
vs Junction Temperature
-75
-50
-25
T
J
,
JUNCTION TEMPERATURE
(
o
C
)
0
25
50
75
100
125
150
0.6
0.8
1.0
1.2
1.4
1.6
1.8
I
D
= 28A
V
GS
= 10V
N
Figure 4.
2
4
6
8
10
0
2
4
6
8
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5%MAX
T
J
= 125
o
C
T
J
= 25
o
C
I
D
= 28A
r
D
,
S
(
m
)
V
GS
,
GATE TO SOURCE VOLTAGE
(
V
)
On-Resistance vs Gate to
Source Voltage
Figure 5. Transfer Characteristics
1.0
1.5
V
GS
, GATE TO SOURCE VOLTAGE (V)
2.0
2.5
3.0
3.5
0
35
70
105
140
175
V
DS
= 5V
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5%MAX
T
J
= -55
o
C
T
J
= 25
o
C
T
J
= 125
o
C
I
D
,
Figure 6.
Forward Voltage vs Source Current
0.0
0.2
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
0.4
0.6
0.8
1.0
1.2
0.001
0.01
0.1
1
10
T
J
= -55
o
C
T
J
= 25
o
C
T
J
= 125
o
C
V
GS
= 0V
I
S
,
200
Source to Drain Diode
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FDMS8660S | 功能描述:MOSFET 30V 40A 2.4 OHM NCH POWER T RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDMS8660S_08 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel PowerTrench SyncFETTM |
| FDMS8662 | 功能描述:MOSFET 30V N-Channel PowerTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDMS8670 | 功能描述:MOSFET 30V/20V N-Channel Power Trench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDMS8670AS | 功能描述:MOSFET 30V N-Channel PowerTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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