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參數(shù)資料
| 型號： | FDMS8660AS |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | N-Channel PowerTrench㈢ SyncFET 30V, 49A, 2.1mヘ |
| 中文描述： | 28 A, 30 V, 0.0021 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, POWER 56, 8 PIN |
| 文件頁數(shù)： | 2/8頁 |
| 文件大?。?/td> | 242K |
| 代理商： | FDMS8660AS |
F
T
www.fairchildsemi.com
2
2007 Fairchild Semiconductor Corporation
FDMS8660AS Rev.C
Electrical Characteristics
T
J
= 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BV
DSS
BV
DSS
T
J
I
DSS
I
GSS
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
I
D
= 1mA, V
GS
= 0V
30
V
I
D
= 10mA, referenced to 25°C
27
mV/°C
V
DS
= 24V, V
GS
= 0V
V
GS
= ±20V, V
DS
= 0V
500
±100
μ
A
nA
On Characteristics
V
GS(th)
V
GS(th)
T
J
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
V
GS
= V
DS
, I
D
= 1mA
1.0
1.7
3.0
V
I
D
= 10mA, referenced to 25°C
-5
mV/°C
r
DS(on)
Static Drain to Source On Resistance
V
GS
= 10V, I
D
= 28A
V
GS
= 4.5V, I
D
= 22A
V
GS
= 10V, I
D
= 28A, T
J
= 125°C
V
DD
= 10V, I
D
= 28A
1.7
2.3
2.3
167
2.1
3.1
3.1
m
g
FS
Forward Transconductance
S
Dynamic Characteristics
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
R
g
Gate Resistance
V
DS
= 15V, V
GS
= 0V,
f = 1MHz
4410
2305
185
1.2
5865
3065
280
pF
pF
pF
f = 1MHz
Switching Characteristics
t
d(on)
Turn-On Delay Time
t
r
Rise Time
t
d(off)
Turn-Off Delay Time
t
f
Fall Time
Q
g
Total Gate Charge
Q
g
Total Gate Charge
Q
gs
Gate to Source Charge
Q
gd
Gate to Drain “Miller” Charge
V
DD
= 15V, I
D
= 28A,
V
GS
= 10V, R
GEN
= 6
16
8
42
5
59
30
12
5.2
29
16
68
10
83
42
ns
ns
ns
ns
nC
nC
nC
nC
V
GS
= 0V to 10V
V
GS
= 0V to 4.5V
V
DD
= 15V,
I
D
= 28A
Drain-Source Diode Characteristics
V
SD
Source to Drain Diode Forward Voltage
t
rr
Reverse Recovery Time
Q
rr
Reverse Recovery Charge
V
GS
= 0V, I
S
=2A (Note 3)
0.4
46
67
0.7
74
108
V
ns
nC
I
F
= 28A, di/dt = 300A/
μ
s
NOTES:
1. R
is determined with the device mounted on a 1in
2
pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R
θ
JC
is
guaranteed by design while R
θ
CA
is determined by
the user's board design.
2. Starting T
J
= 25°C, L = 3mH, I
AS
= 22A, V
DD
= 30V, V
GS
= 10V.
3. Pulse Test: Pulse Width < 30
0
μ
s, Duty cycle < 2.0%.
a. 50°C/W when mounted on
a 1 in
pad of 2 oz copper.
b. 125°C/W when mounted on a
minimum pad of 2 oz copper.
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相關代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FDMS8660S | 功能描述:MOSFET 30V 40A 2.4 OHM NCH POWER T RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDMS8660S_08 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel PowerTrench SyncFETTM |
| FDMS8662 | 功能描述:MOSFET 30V N-Channel PowerTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDMS8670 | 功能描述:MOSFET 30V/20V N-Channel Power Trench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDMS8670AS | 功能描述:MOSFET 30V N-Channel PowerTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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