參數(shù)資料
型號： FDMS3672
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： JFETs
英文描述： N-Channel UltraFET Trench MOSFET 100V, 22A, 23mohm
中文描述： 22 A, 100 V, 0.023 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝： ROHS COMPLIANT, POWER56, 8 PIN
文件頁數(shù)： 4/7頁
文件大小： 259K
代理商： FDMS3672
F
M
FDMS3672 Rev.C
www.fairchildsemi.com
4
Figure 7.
0
10
20
30
40
0
2
4
6
8
10
I
D
= 7.4A
V
DD
= 75V
V
DD
= 25V
V
G
,
Q
g
, GATE CHARGE(nC)
V
DD
= 50V
Gate Charge Characteristics
Figure 8.
0.1
1
10
100
10
100
1000
10000
f = 1MHz
V
GS
= 0V
C
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
C
rss
C
oss
C
iss
Capacitance vs Drain
to Source Voltage
Figure 9.
0.01
0.1
t
AV
, TIME IN AVALANCHE(ms)
1
10
100
1
10
300
T
J
= 25
o
C
T
J
= 125
o
C
I
A
,
20
Unclamped Inductive
Switching Capability
Figure 10.
Current vs Case Temperature
25
50
75
100
125
150
0
10
20
30
40
50
Limited by Package
R
θ
JC
= 1.6
o
C/W
V
GS
= 6V
V
GS
= 10V
I
D
,
T
C
, CASE TEMPERATURE
(
Maximum Continuous Drain
o
C
)
Figure 11. Forward Bias Safe
Operating Area
0.1
1
10
100
1E-3
0.01
0.1
1
10
10s
100us
1ms
10ms
100ms
1s
DC
D
,
V
DS
, DRAIN to SOURCE VOLTAGE (V)
60
OPERATION IN THIS
AREA MAY BE
LIMITED BY r
DS(on)
SINGLE PULSE
T
J
= MAX RATED
T
A
= 25
O
C
400
Figure 12.
10
-3
10
-2
10
-1
10
0
10
1
10
2
10
3
1
10
100
1000
0.3
V
GS
= 10V
SINGLE PULSE
P
(
P
)
,
t, PULSE WIDTH (s)
Single Pulse Maximum
Power Dissipation
2000
T
A
= 25
o
C
I = I
25
FOR TEMPERATURES
ABOVE 25
o
C DERATE PEAK
CURRENT AS FOLLOWS:
150
----------------------
T
A
–
Typical Characteristics
T
J
= 25°C unless otherwise noted
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
FDMS3686S 功能描述:MOSFET 30V Asymmetric 2xNCh PowerTrench MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDMS4435BZ 功能描述:MOSFET P-Channel PowerTrench MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDMS5352 功能描述:MOSFET 60V N-Channel PowerTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDMS5672 功能描述:MOSFET 60V N-ChUltraFET PowerTrench MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDMS5672_0712 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel UltraFET Trench㈢ MOSFET
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