參數(shù)資料
型號： FDMS3672
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： JFETs
英文描述： N-Channel UltraFET Trench MOSFET 100V, 22A, 23mohm
中文描述： 22 A, 100 V, 0.023 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝： ROHS COMPLIANT, POWER56, 8 PIN
文件頁數(shù)： 3/7頁
文件大?。?/td> 259K
代理商： FDMS3672
F
M
FDMS3672 Rev.C
www.fairchildsemi.com
3
Typical Characteristics
T
J
= 25°C unless otherwise noted
Figure 1.
0.0
0.5
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
1.0
1.5
2.0
2.5
3.0
0
10
20
30
40
50
60
V
GS
=
8V
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5%MAX
V
GS
=
6V
V
GS
= 5V
V
GS
=
10V
I
D
,
On-Region Characteristics
Figure 2.
vs Drain Current and Gate Voltage
0
10
20
30
40
50
60
0.5
1.0
1.5
2.0
2.5
3.0
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5%MAX
N
D
I
D
, DRAIN CURRENT(A)
V
GS
=
8V
V
GS
= 6V
V
GS
= 5V
V
GS
=
10V
Normalized On-Resistance
Figure 3. Normalized On- Resistance
vs Junction Temperature
-50
-25
0
25
50
75
100
125
150
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
I
D
= 7.4A
V
GS
= 10V
N
T
J
, JUNCTION TEMPERATURE
(
o
C
)
Figure 4.
4.5
6.0
7.5
9.0
10
20
30
40
50
60
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5%MAX
T
J
= 150
o
C
T
J
= 25
o
C
I
D
= 7.4A
r
D
,
S
(
m
)
V
GS
, GATE TO SOURCE VOLTAGE (V)
10
On-Resistance vs Gate to
Source Voltage
Figure 5. Transfer Characteristics
2
3
V
GS
, GATE TO SOURCE VOLTAGE (V)
4
5
6
7
8
0
5
10
15
20
25
30
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5%MAX
T
J
= -55
o
C
T
J
= 25
o
C
T
J
= 150
o
C
I
D
,
Figure 6.
Forward Voltage vs Source Current
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1E-3
0.01
0.1
1
10
100
T
J
= -55
o
C
T
J
= 25
o
C
T
J
= 150
o
C
V
GS
= 0V
I
S
,
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
Source to Drain Diode
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