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參數(shù)資料
| 型號： | FDMA291P |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | Single P-Channel 1.8V Specified PowerTrench MOSFET |
| 中文描述： | 6600 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | 2 X 2 MM, 0.80 MM HEIGHT, HALOGEN FREE, ROHS COMPLIANT, MO-229, MICROFET-6 |
| 文件頁數(shù)： | 2/6頁 |
| 文件大小： | 132K |
| 代理商： | FDMA291P |
FDMA291P Rev B (W)
Electrical Characteristics
T
A
= 25°C unless otherwise noted
Test Conditions
Symbol
Parameter
Min
Typ Max Units
Off Characteristics
BV
DSS
BV
DSS
T
J
I
DSS
I
GSS
Drain–Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate–Body Leakage
V
GS
= 0 V,
I
D
= –250
μ
A, Referenced to 25°C
V
DS
= –16 V,
V
GS
= 0 V
V
GS
= ± 8 V,
V
DS
= 0 V
I
D
= –250
μ
A
–20
V
–12
mV/
°
C
μ
A
nA
–1
±100
On Characteristics
V
GS(th)
V
GS(th)
T
J
r
DS(on)
(Note 2)
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
V
DS
= V
GS
,
I
D
= –250
μ
A, Referenced to 25°C
V
GS
= –4.5 V, I
D
= –6.6 A
V
GS
= –2.5 V, I
D
= –5.1 A
V
GS
= –1.8 V, I
D
= –3.9 A
V
GS
= –4.5 V, I
D
= –6.6 A, T
J
=125°C
V
DS
= –5 V,
I
D
= –6.6 A
I
D
= –250
μ
A
–0.4
–0.7
–1.0
V
3
mV/
°
C
m
36
51
79
49
42
58
98
64
g
FS
Forward Transconductance
16
S
Dynamic Characteristics
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
1000
190
100
pF
pF
pF
V
DS
= –10 V,
f = 1.0 MHz
V
GS
= 0 V,
Switching Characteristics
(Note 2)
t
d(on)
Turn–On Delay Time
t
r
Turn–On Rise Time
t
d(off)
Turn–Off Delay Time
t
f
Turn–Off Fall Time
Q
g
Total Gate Charge
Q
gs
Gate–Source Charge
Q
gd
Gate–Drain Charge
13
9
42
25
10
2
3
23
18
68
40
14
ns
ns
ns
ns
nC
nC
nC
V
DD
= –10 V,
V
GS
= –4.5 V, R
GEN
= 6
I
D
= –1 A,
V
DS
= –10 V,
V
GS
= –4.5 V
I
D
= –6.6 A,
Drain–Source Diode Characteristics and Maximum Ratings
I
S
Maximum Continuous Drain–Source Diode Forward Current
V
SD
Drain–Source Diode Forward
Voltage
t
rr
Diode Reverse Recovery Time
Q
rr
Diode Reverse Recovery Charge
–2
A
V
GS
= 0 V, I
S
= –2 A
(Note 2)
–0.8
–1.2
V
20
8
ns
nC
I
F
= –6.6 A,
dI
F
/dt
= 100 A/μs
Notes:
1.
R
θ
JA
is determined with the device mounted on a 1 in
2
oz. copper pad on a 1.5 x 1.5 in. board of FR-4 material. R
θ
JC
is guaranteed by design while R
θ
JA
is
determined by the user's board design.
(a) R
θ
JA
= 52°C/W when mounted on a 1in
2
pad of 2 oz copper, 1.5” x 1.5” x 0.062” thick PCB
(b)
R
θ
JA
= 145°C/W when mounted on a minimum pad of 2 oz copper
2.
Pulse Test: Pulse Width < 300
μ
s, Duty Cycle < 2.0%
F
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