參數(shù)資料
型號: FDMA1025P
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: JFETs
英文描述: Dual P-Channel PowerTrench MOSFET -20V, -3.1A, 105mohm
中文描述: 3.1 A, 20 V, 0.22 ohm, 2 CHANNEL, P-CHANNEL, Si, POWER, MOSFET
封裝: ROHS COMPLIANT, 6 PIN
文件頁數(shù): 4/6頁
文件大?。?/td> 338K
代理商: FDMA1025P
F
M
FDMA1025P Rev.B
www.fairchildsemi.com
4
Figure 7.
0
2
4
6
8
0
2
4
6
8
10
I
D
= -3.1A
V
DD
= -12V
V
DD
= -8V
-
G
,
Q
g
, GATE CHARGE(nC)
V
DD
= -10V
Gate Charge Characteristics
Figure 8.
0.1
1
10
10
100
1000
30
f = 1MHz
V
GS
= 0V
C
-V
DS
, DRAIN TO SOURCE VOLTAGE (V)
C
rss
C
oss
C
iss
Capacitance vs Drain
to Source Voltage
Figure 9. Forward Bias Safe
Operating Area
0.1
1
10
0.01
0.1
1
10
100ms
1s
10s
DC
10ms
1ms
100us
r
DS(on)
LIMITE
SINGLE PULSE
T
J
= MAX RATED
R
θ
JA
=173
o
C/W
T
A
= 25
O
C
-
D
,
-VDS, DRAIN to SOURCE VOLTAGE (V)
Figure 10.
10
-4
10
-3
10
t, PULSE WIDTH (s)
-2
10
-1
10
0
10
1
10
2
10
3
1
10
100
0.6
V
GS
= -4.5V
SINGLE PULSE
P
(
P
)
,
T
A
= 25
o
C
I = I
25
FOR TEMPERATURES
ABOVE 25
o
C DERATE PEAK
CURRENT AS FOLLOWS:
150
-----------------------
T
A
Single Pulse Maximum
Power Dissipation
Figure 11. Transient Thermal Response Curve
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
0.001
0.01
0.1
1
DUTY CYCLE-DESCENDING ORDER
N
I
θ
J
t, RECTANGULAR PULSE DURATION (s)
D = 0.5
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
P
DM
t
1
t
2
NOTES:
DUTY FACTOR: D = t
1
/t
2
PEAK T
J
= P
DM
x Z
θ
JA
x R
θ
JA
+ T
A
Typical Characteristics
T
J
= 25°C unless otherwise noted
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