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參數(shù)資料
| 型號： | FDMA1025P |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | Dual P-Channel PowerTrench MOSFET -20V, -3.1A, 105mohm |
| 中文描述： | 3.1 A, 20 V, 0.22 ohm, 2 CHANNEL, P-CHANNEL, Si, POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, 6 PIN |
| 文件頁數(shù)： | 2/6頁 |
| 文件大小： | 338K |
| 代理商： | FDMA1025P |
F
M
FDMA1025P Rev.B
www.fairchildsemi.com
2
Electrical Characteristics
T
J
= 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BV
DSS
BV
DSS
T
J
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
I
D
=
–
250
μ
A, V
GS
= 0V
–
20
V
I
D
=
–
250
μ
A, referenced to 25°C
14
mV/°
C
I
DSS
Zero Gate Voltage Drain Current
V
DS
=
–
16V,
V
GS
= 0V
V
GS
= ±12V, V
DS
= 0V
–
1
μ
A
T
J
= 125°C
–
100
I
GSS
Gate to Source Leakage Current
±100
nA
On Characteristics
V
GS(th)
V
GS(th)
T
J
Gate to Source Threshold Voltage
V
GS
= V
DS
, I
D
=
–
250
μ
A
–
0.4
–
0.9
–
1.5
V
Gate to Source Threshold Voltage
Temperature Coefficient
I
D
=
–
250
μ
A, referenced to 25°C
–
3.8
mV/°C
r
DS(on)
Drain to Source On Resistance
V
GS
=
–
4.5V, I
D
=
–
3.1A
V
GS
=
–
2.5V, I
D
=
–
2.3A
V
GS
=
–
4.5V, I
D
=
–
3.1A,T
J
= 125°C
V
DS
=
–
5V, I
D
=
–
3.1A
88
144
121
6.2
155
220
220
m
g
FS
Forward Transconductance
S
Dynamic Characteristics
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V
DS
=
–
10V, V
GS
= 0V,
f = 1MHz
340
80
45
450
105
70
pF
pF
pF
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
g(TOT)
Q
gs
Q
gd
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge at 4.5V
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
V
DD
=
–
10V, I
D
=
–
3.1A
V
GS
=
–
4.5V, R
GEN
= 6
5
10
26
24
16
4.8
ns
ns
ns
ns
nC
nC
nC
14
13
8
3.4
0.8
1.0
V
GS
= 0V to
–
4.5V V
DD
=
–
10V
I
D
=
–
3.1A
Drain-Source Diode Characteristics
V
SD
t
rr
Q
rr
Source to Drain Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
V
GS
= 0V, I
S
=
–
1.1A (Note 2)
–
0.8
17
10
–
1.2
26
15
V
ns
nC
I
F
=
–
3.1A, di/dt = 100A/
μ
s
Notes:
1:
R
is determined with the device mounted on a 1 in
2
oz copper pad on a 1.5
x 1.5 in. board of FR-4 material. R
θ
JC
is guaranteed by design while
R
θ
JA
is determined by the
user's board design.
(a)
R
θ
JA
=86°C/W when mounted on a 1 in
2
pad of 2 oz copper, 1.5’x1.5’x0.062’ thick PCB.
(b)
R
θ
JA
=173°C/W when mounted on a minimum pad of 2 oz copper.
2:
Pulse Test: Pulse Width < 30
0
μ
s, Duty cycle < 2.0%.
b. 173°C/W when mounted on a
minimum pad.
a. 86°C/W when mounted on a
1in
pad of 2 oz copper.
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