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參數(shù)資料
| 型號： | FDM3300NZ |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | Monolithic Common Drain N-Channel 2.5V Specified PowerTrench MOSFET |
| 中文描述： | 10 A, 20 V, 0.023 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | 3.30 X 3.30 MM, LEAD FREE, MLP-8 |
| 文件頁數(shù)： | 2/8頁 |
| 文件大?。?/td> | 460K |
| 代理商： | FDM3300NZ |
FDM3300NZ Rev E3 (W)
Electrical Characteristics
Symbol
T
A
= 25°C unless otherwise noted
Test Conditions
Parameter
Min
Typ Max Units
Off Characteristics
BV
DSS
Drain
–Source Breakdown
Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate–Body Leakage,
On Characteristics
V
GS(th)
Gate Threshold Voltage
V
GS(th)
T
J
Temperature Coefficient
R
DS(on)
Static Drain–Source
On–Resistance
V
GS
= 0 V,
I
D
= 250
μ
A
20
V
BV
DSS
T
J
I
DSS
I
GSS
I
D
= 250
μ
A, Referenced to 25
°
C
10.7
mV/
°
C
V
DS
= 16 V,
V
GS
=
±
12 V,
V
GS
= 0 V
V
DS
= 0 V
1
μ
A
μ
A
±
10
(Note 2)
V
DS
= V
GS
,
I
D
= 250
μ
A, Referenced to 25
°
C
V
GS
= 4.5 V,
I
D
= 10A
V
GS
= 2.5 V,
I
= 9 A
V
GS
= 4.5 V, I
D
= 10A, T
J
=125
°
C
V
GS
= 2.5 V,
V
DS
= 5 V
V
DS
= 5 V,
I
D
=10 A
I
D
= 250
μ
A
0.6
0.9
–3
1.5
V
Gate Threshold Voltage
mV/
°
C
16
20
22
35
23
28
31
m
A
S
I
D(on)
g
FS
Dynamic Characteristics
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
R
G
Gate Resistance
On–State Drain Current
Forward Transconductance
10
1210
330
180
2.3
pF
pF
pF
V
DS
= 10 V,
f = 1.0 MHz
V
GS
= 0 V,
V
GS
= 0 V,
f = 1.0 MHz
Switching Characteristics
(Note 2)
t
d(on)
Turn–On Delay Time
t
r
Turn–On Rise Time
t
d(off)
Turn–Off Delay Time
t
f
Turn–Off Fall Time
Q
g
Total Gate Charge
Q
gs
Gate–Source Charge
Q
gd
Gate–Drain Charge
10
14
26
13
12
2
4
20
25
42
23
17
ns
ns
ns
ns
nC
nC
nC
V
DD
= 10 V,
V
GS
= 4.5 V,
I
D
= 1 A,
R
GEN
= 6
V
DS
= 10 V,
V
GS
= 4.5 V
I
D
= 10 A,
Drain
–Source Diode Characteristics and Maximum Ratings
I
S
Maximum Continuous Drain
–Source Diode Forward Current
V
SD
Drain–Source Diode Forward
Voltage
t
rr
Diode Reverse Recovery Time
Q
rr
Diode Reverse Recovery Charge
2
A
V
V
GS
= 0 V,
I
S
= 2 A
(Note 2)
0.7
1.2
20
6
nS
nC
I
F
= 10 A,
d
iF
/d
t
= 100 A/μs
Notes:
1.
R
θ
JA
is determined with the device mounted on a 1 in2 2 oz. copper pad on a 1.5 x 1.5 in. board of FR-4 material. R
θ
JC
are guaranteed by design while R
θ
JA
is
determined by the user's board design.
(a).
R
θ
JA
= 52°C/W when mounted on a 1in
2
pad of 2 oz copper, 1.5” x 1.5” x 0.062” thick PCB
(b).
R
θ
JA
= 108°C/W when mounted on a minimum pad of 2 oz copper
2.
Pulse Test: Pulse Width < 300
μ
s, Duty Cycle < 2.0%
F
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參數(shù)描述 |
|---|---|
| FDM3300NZ_07 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Monolithic Common Drain N-Channel 2.5V Specified PowerTrench㈢ MOSFET 20V, 10A, 23mヘ |
| FDM350 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Logic IC |
| FDM350M | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Logic IC |
| FDM3622 | 功能描述:MOSFET 100V N-Ch PowerTrench MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDM3622_07 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel PowerTrench㈢ MOSFET 100V, 4.4A, 60mヘ |
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