參數(shù)資料
型號(hào)： FDG6318PZ
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： 小信號(hào)晶體管
英文描述： Dual P-Channel, Digital FET
中文描述： 500 mA, 20 V, 2 CHANNEL, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
封裝： SC-70, 6 PIN
文件頁數(shù)： 8/9頁
文件大?。?/td> 217K
代理商： FDG6318PZ
2003 Fairchild Semiconductor Corporation
FDG6318PZ Rev.B
F
SPICE Thermal Model
REV January 2003
FDG6318PZ_JA Junction Ambient
Copper Area= 1sq.in
CTHERM1 Junction c2 0.17e-4
CTHERM2 c2 c3 2.7e-4
CTHERM3 c3 c4 5.5e-4
CTHERM4 c4 c5 1.4e-3
CTHERM5 c5 c6 2.2e-3
CTHERM6 c6 c7 2.6e-3
CTHERM7 c7 c8 6.6e-3
CTHERM8 c8 Ambient 0.29
RTHERM1 Junction c2 11.2
RTHERM2 c2 c3 11.5
RTHERM3 c3 c4 12.5
RTHERM4 c4 c5 27
RTHERM5 c5 c6 81
RTHERM6 c6 c7 88
RTHERM7 c7 c8 92
RTHERM8 c8 Ambient 93
SABER Thermal Model
SABER thermal model FDG6318PZ
Copper Area= 1sq.in
template thermal_model th tl
thermal_c th, tl
{
ctherm.ctherm1 th c2 = 0.17e-4
ctherm.ctherm2 c2 c3 = 2.7e-4
ctherm.ctherm3 c3 c4 = 5.5e-4
ctherm.ctherm4 c4 c5 = 1.4e-3
ctherm.ctherm5 c5 c6 = 2.2e-3
ctherm.ctherm6 c6 c7 = 2.6e-3
ctherm.ctherm7 c7 c8 = 6.6e-3
ctherm.ctherm8 c8 tl = 0.29
rtherm.rtherm1 th c2 = 11.2
rtherm.rtherm2 c2 c3 = 11.5
rtherm.rtherm3 c3 c4 = 12.5
rtherm.rtherm4 c4 c5 = 27
rtherm.rtherm5 c5 c6 = 81
rtherm.rtherm6 c6 c7 = 88
rtherm.rtherm7 c7 c8 = 92
rtherm.rtherm8 c8 tl = 93
}
RTHERM6
RTHERM8
RTHERM7
RTHERM5
RTHERM4
RTHERM3
CTHERM4
CTHERM6
CTHERM5
CTHERM3
CTHERM2
CTHERM1
tl
2
3
4
5
6
7
JUNCTION
AMBIENT
8
th
RTHERM2
RTHERM1
CTHERM7
CTHERM8
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FDG6320C 功能描述:MOSFET SC70-6 COMP N-P-CH RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDG6320C 制造商:Fairchild Semiconductor Corporation 功能描述:25V 1/2 BR N/P 4/10 O SC70-6
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