參數(shù)資料
型號(hào)： FDG6318PZ
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類(lèi)： 小信號(hào)晶體管
英文描述： Dual P-Channel, Digital FET
中文描述： 500 mA, 20 V, 2 CHANNEL, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
封裝： SC-70, 6 PIN
文件頁(yè)數(shù)： 1/9頁(yè)
文件大?。?/td> 217K
代理商： FDG6318PZ
2003 Fairchild Semiconductor Corporation
January 2003
FDG6318PZ Rev. B
F
FDG6318PZ
Dual P-Channel, Digital FET
General Description
These dual P-Channel logic level enhancement mode
MOSFET are produced using Fairchild Semiconductor’s
especially tailored to minimize on-state resistance. This
device has been designed especially for bipolar digital
transistors and small signal MOSFETS
Applications
Battery management
Features
-0.5A, -20V. r
DS(ON)
= 780m
(
Max)@ V
GS
= -4.5 V
r
DS(ON)
= 1200m
(
Max) @ V
GS
= -2.5 V
Very low level gate drive requirements allowing direct
operation in 3V circuits (V
GS(TH)
< 1.5V).
Gate-Source Zener for ESD ruggedness (>1.4kV Human
Body Model).
Compact industry standard SC-70-6 surface mount
package.
MOSFET Maximum Ratings
T
A
=25°C unless otherwise noted
Thermal Characteristics
Package Marking and Ordering Information
Symbol
V
DSS
V
GS
Parameter
Ratings
-20
±
12
Units
V
V
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Continuous (T
C
= 25
o
C, V
GS
= - 4.5V)
Continuous (T
C
= 100
o
C, V
GS
= - 2.5V)
Pulsed
Power dissipation
Derate above 25°C
Operating and Storage Temperature
Electrostatic Discharge Rating MIL-STD-883D
Human Body Model ( 100pF / 1500
)
I
D
-0.5
-0.3
A
A
Figure 4
0.3
2.4
-55 to 150
P
D
W
mW/
o
C
o
C
T
J
, T
STG
ESD
1.4
kV
R
θ
JA
Thermal Resistance Junction to Ambient (Note 1)
415
o
C/W
Device Marking
.68
Device
FDG6318PZ
Package
SC70-6
Reel Size
7”
Tape Width
8 mm
Quantity
3000
S
G
D
D
G
S
Pin 1
SC70-6
The pinouts are symmetrical; pin1 and pin 4 are interchangeable.
S
G
D
D
G
S
6 or 3
5 or 2
4 or 1
1 or 4
2 or 5
3 or 6
相關(guān)PDF資料
PDF描述
FDG6318P CAP CER 1500PF 630V 10% X7R 1206
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FDG6321 Dual N & P Channel Digital FET
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
FDG6320C 功能描述:MOSFET SC70-6 COMP N-P-CH RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDG6320C 制造商:Fairchild Semiconductor Corporation 功能描述:25V 1/2 BR N/P 4/10 O SC70-6
FDG6320C_D87Z 功能描述:MOSFET SC70-6 COMP N-P-CH RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDG6321 制造商:FAIRCHILD 制造商全稱(chēng):Fairchild Semiconductor 功能描述:Dual N & P Channel Digital FET
FDG6321C 功能描述:MOSFET SC70-6 COMP N-P-CH RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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