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參數(shù)資料
| 型號(hào)： | FDG6318PZ |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | Dual P-Channel, Digital FET |
| 中文描述： | 500 mA, 20 V, 2 CHANNEL, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | SC-70, 6 PIN |
| 文件頁數(shù)： | 4/9頁 |
| 文件大?。?/td> | 217K |
| 代理商： | FDG6318PZ |
2003 Fairchild Semiconductor Corporation
FDG6318PZ Rev. B
F
Figure 5. Forward Bias Safe Operating Area
Figure 6. Transfer Characteristics
Figure 7. Saturation Characteristics
Figure 8. Drain to Source On Resistance vs Gate
Voltage and Drain Current
Figure 9. Normalized Drain to Source On
Resistance vs Junction Temperature
Figure 10. Normalized Gate Threshold Voltage vs
Junction Temperature
Typical Characteristic
(Continued)
T
A
= 25°C unless otherwise noted
0.1
1
10
1
10
0.05
30
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
-
D
,
T
J
= MAX RATED
T
A
= 25
C
SINGLE PULSE
LIMAREA MAY BE
DS(ON)
OPERATION IN THIS
100
μ
s
10ms
1ms
0
1
2
3
0
1
2
3
4
-
D
,
-V
GS
, GATE TO SOURCE VOLTAGE (V)
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
V
DD
= -10V
T
J
= 150
o
C
T
J
= 25
o
C
T
J
= -55
o
C
0
1
2
3
0
0.5
1.0
1.5
2.0
2.5
3.0
-
D
,
-V
DS
, DRAIN TO SOURCE VOLTAGE (V)
V
GS
= -2.5V
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
V
GS
= -2V
T
A
= 25
o
C
V
GS
= -4.5V
0.5
0.6
0.7
0.8
0.9
1.0
2
3
4
5
6
I
D
= -0.1A
-V
GS
, GATE TO SOURCE VOLTAGE (V)
I
D
= -0.5A
r
D
,
O
)
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
0.75
1.00
1.25
1.50
-80
-40
0
40
80
120
160
N
T
J
, JUNCTION TEMPERATURE (
o
C)
O
V
GS
= -4.5V, I
D
= -0.5A
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
0.6
0.8
1.0
1.2
-80
-40
0
40
80
120
160
N
T
J
, JUNCTION TEMPERATURE (
o
C)
V
GS
= V
DS
, I
D
= 250
μ
A
T
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FDG6320C | 功能描述:MOSFET SC70-6 COMP N-P-CH RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDG6320C | 制造商:Fairchild Semiconductor Corporation 功能描述:25V 1/2 BR N/P 4/10 O SC70-6 |
| FDG6320C_D87Z | 功能描述:MOSFET SC70-6 COMP N-P-CH RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDG6321 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Dual N & P Channel Digital FET |
| FDG6321C | 功能描述:MOSFET SC70-6 COMP N-P-CH RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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