參數(shù)資料
型號(hào): FDG6318PZ
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: 小信號(hào)晶體管
英文描述: Dual P-Channel, Digital FET
中文描述: 500 mA, 20 V, 2 CHANNEL, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
封裝: SC-70, 6 PIN
文件頁數(shù): 6/9頁
文件大?。?/td> 217K
代理商: FDG6318PZ
2003 Fairchild Semiconductor Corporation
FDG6318PZ Rev. B
F
PSPICE Electrical Model
.SUBCKT FDG6318PZ 2 1 3 ;
CA 12 8 0.6e-10
CB 15 14 1.1e-10
CIN 6 8 0.75e-10
rev January 2003
DBODY 5 7 DBODYMOD
DBREAK 7 11 DBREAKMOD
DPLCAP 10 6 DPLCAPMOD
EBREAK 5 11 17 18 -23.3
EDS 14 8 5 8 1
EGS 13 8 6 8 1
ESG 5 10 8 6 1
EVTHRES 6 21 19 8 1
EVTEMP 6 20 18 22 1
IT 8 17 1
LDRAIN 2 5 1e-9
LGATE 1 9 0.47e-9
LSOURCE 3 7 0.47e-9
MMED 16 6 8 8 MMEDMOD
MSTRO 16 6 8 8 MSTROMOD
MWEAK 16 21 8 8 MWEAKMOD
RBREAK 17 18 RBREAKMOD 1
RDRAIN 50 16 RDRAINMOD 280e-3
RGATE 9 20 12.4
RLDRAIN 2 5 10
RLGATE 1 9 4.7
RLSOURCE 3 7 4.7
RSLC1 5 51 RSLCMOD 1e-6
RSLC2 5 50 1e3
RSOURCE 8 7 RSOURCEMOD 190e-3
RVTHRES 22 8 RVTHRESMOD 1
RVTEMP 18 19 RVTEMPMOD 1
S1A 6 12 13 8 S1AMOD
S1B 13 12 13 8 S1BMOD
S2A 6 15 14 13 S2AMOD
S2B 13 15 14 13 S2BMOD
VBAT 22 19 DC 1
ESLC 51 50 VALUE={(V(5,51)/ABS(V(5,51)))*(PWR(V(5,51)/(1e-6*20),2.5))}
.MODEL DBODYMOD D (IS = 7.7e-11 N=1.277 RS = 1e-3 TRS1 = 2.8e-1 TRS2 = 3e-4 XTI=0 IKF=0.5 CJO = 3.9e-11
TT=33e-9 M = 0.50)
.MODEL DBREAKMOD D (RS = 5.3e-1 TRS1 = 5.5e-3 TRS2 = -9e-5)
.MODEL DPLCAPMOD D (CJO = 0.5e-10 IS = 1e-30 N = 10 M = 0.55)
.MODEL MMEDMOD PMOS (VTO = -1.17 KP = 0.6 IS=1e-30 N = 10 TOX = 1 L = 1u W = 1u RG = 12.4)
.MODEL MSTROMOD PMOS (VTO = -1.45 KP = 1.5 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u)
.MODEL MWEAKMOD PMOS (VTO = -0.99 KP = 0.05 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u RG = 124 RS = 0.1)
.MODEL RBREAKMOD RES (TC1 = 5.5e-4 TC2 = -1e-7)
.MODEL RDRAINMOD RES (TC1 = 2.8e-3 TC2 = 4.9e-6)
.MODEL RSLCMOD RES (TC1 = 3.7e-3 TC2 = 7.8e-6)
.MODEL RSOURCEMOD RES (TC1 = 3e-3 TC2 = 5.2e-6)
.MODEL RVTHRESMOD RES (TC1 = 9e-4 TC2 = 3e-7)
.MODEL RVTEMPMOD RES (TC1 = -5.5e-4 TC2 = -1e-9)
.MODEL S1AMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = 0.5 VOFF= 0.2)
.MODEL S1BMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = 0.2 VOFF= 0.5)
.MODEL S2AMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = 0.4 VOFF= -0.1)
.MODEL S2BMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -0.1 VOFF= 0.4)
.ENDS
Note: For further discussion of the PSPICE model, consult
A New PSPICE Sub-Circuit for the Power MOSFET Featuring Global
Temperature Options
; IEEE Power Electronics Specialist Conference Records, 1991, written by William J. Hepp and C. Frank
Wheatley.
1
GATE
RGATE
EVTEMP
18
22
9
+
12
13
8
14
13
13
15
S1A
S1B
S2A
S2B
CA
CB
EGS
EDS
CIN
MWEAK
RDRAIN
16
DBREAK
EBREAK
DBODY
DRAIN
2
RSOURCE
SOURCE
3
RBREAK
RVTEMP
VBAT
IT
+
19
8
ESG
DPLCAP
ESLC
RSLC1
51
+
RSLC2
6
8
6
10
5
50
5
51
21
11
8
14
5
8
6
8
7
17
18
19
+
+
+
+
+
22
MMED
MSTRO
RVTHRES
LSOURCE
RLSOURCE
LDRAIN
RLDRAIN
LGATE
RLGATE
20
8
17
18
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