型號: | FDFMA3N109 |
廠商: | FAIRCHILD SEMICONDUCTOR CORP |
元件分類: | 小信號晶體管 |
英文描述: | Integrated N-Channel PowerTrench MOSFET and Schottky Diode |
中文描述: | 2900 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
封裝: | 2 X 2 MM, 0.80 MM HEIGHT, ROHS COMPLIANT, MICROFET-6 |
文件頁數(shù): | 6/7頁 |
文件大?。?/td> | 129K |
代理商: | FDFMA3N109 |
相關(guān)PDF資料 |
PDF描述 |
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FDFMC2P120 | Integrated P-Channel PowerTrench MOSFET and Schottky Diode |
FDFS2P102A | Integrated P-Channel PowerTrench MOSFET and Schottky Diode |
FDFS2P102 | FETKEY P-Channel MOSFET with Schottky Diode |
FDFS2P103 | Integrated P-Channel PowerTrench MOSFET and Schottky Diode |
FDFS2P103A | Integrated P-Channel PowerTrench MOSFET and Schottky Diode |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
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FDFMA3N109_08 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Integrated N-Channel PowerTrench㈢ MOSFET and Schottky Diode |
FDFMA3P029Z | 功能描述:MOSFET PChan Sgl -30V -3.3A PowerTrench MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
FDFMC2P120 | 功能描述:MOSFET -20V Integr P-Ch PT MOSFET-Schtky Dio RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
FDFME2P823CT | 制造商:Fairchild Semiconductor Corporation 功能描述: |
FDFME2P823ZT | 功能描述:MOSFET -20V Integrated P-Ch PwrTrnch w/Sch Diode RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |