參數(shù)資料
型號(hào)： FDFS2P102
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： JFETs
英文描述： FETKEY P-Channel MOSFET with Schottky Diode
中文描述： 3.3 A, 20 V, 0.125 ohm, P-CHANNEL, Si, POWER, MOSFET
封裝： SO-8
文件頁(yè)數(shù)： 1/5頁(yè)
文件大小： 87K
代理商： FDFS2P102
F
FDFS2P102 Rev. E
FDFS2P102
Integrated P-Channel MOSFET and Schottky Diode
October 2000
2000 Fairchild Semiconductor International
MOSFET Maximum Ratings
T
A
=25
o
C unless otherwise noted
Symbol
V
DSS
V
GSS
I
D
Parameter
Ratings
-20
±
20
-3.3
-20
2
1.6
1
0.9
-55 to +150
Units
V
V
A
Drain-Source Voltage
Gate-Source Voltage
Drain Current
- Continuous
- Pulsed
(Note 1a)
Power Dissipation for Dual Operation
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
P
D
(Note 1c)
W
T
J
, T
STG
Operating and Storage Temperature Range
°
C
Schottky Diode Maximum Ratings
T
A
=25
o
C unless otherwise noted
V
RRM
Repetitive Peak Reverse Voltage
I
O
Average Forward Current
(Note 1a)
20
1
V
A
Package Marking and Ordering Information
Device Marking
Device
FDFS2P102
FDFS2P102
Reel Size
13
Tape Width
12mm
Quantity
2500 units
General Description
The FDFS2P102 combines the exceptional performance of
Fairchild's high cell density
MOSFET with a very low forward
voltage drop Schottky barrier rectifier in an SO-8 package.
This device is designed specifically as a single package solution
for DC to DC converters. It features a fast switching, low gate
charge MOSFET with very low on-state resistance. The
independently connected Schottky diode allows its use in a variety
of DC/DC converter topologies.
Applications
DC/DC converters
Load Switch
Motor Drives
Features
–3.3 A, –20 V.
R
DS(ON)
= 0.125
@ V
GS
= –10 V
R
DS(ON)
= 0.200
@ V
GS
= –4.5 V.
VF < 0.39 V @ 1 A (TJ = 125 oC).
VF < 0.47 V @ 1 A.
VF < 0.58 V @ 2 A.
Schottky and MOSFET incorporated into single power
surface mount SO-8 package.
Electrically independent Schottky and MOSFET pinout for
design flexibility.
A
A
S
G
C
C
D
D
Pin 1
8
1
7
2
6
3
5
4
A
A
S
G
C
C
D
D
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
FDFS2P102_Q 功能描述:MOSFET Integrated P-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDFS2P102A 功能描述:MOSFET P-Ch PowerTrench Integrated RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDFS2P102A_NL 功能描述:MOSFET 20V/20V 125/200MO SO8 500A GOX, PTII RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDFS2P103 功能描述:MOSFET P-Ch PowerTrench Integrated RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDFS2P103_Q 功能描述:MOSFET P-Ch PowerTrench Integrated RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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