參數(shù)資料
型號： FDFMA3N109
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： 小信號晶體管
英文描述： Integrated N-Channel PowerTrench MOSFET and Schottky Diode
中文描述： 2900 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
封裝： 2 X 2 MM, 0.80 MM HEIGHT, ROHS COMPLIANT, MICROFET-6
文件頁數(shù)： 2/7頁
文件大?。?/td> 129K
代理商： FDFMA3N109
FDFMA3N109 Rev B(W)
Electrical Characteristics
T
A
= 25°C unless otherwise noted
Test Conditions
Symbol
Parameter
Min
Typ Max Units
Off Characteristics
BV
DSS
BV
DSS
T
J
I
DSS
I
GSS
Drain–Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate–Body Leakage Current
V
GS
= 0 V,
I
D
= 250
μ
A, Referenced to 25°C
V
DS
= 24 V, V
GS
= 0 V
V
GS
= ± 12 V, V
DS
= 0 V
I
D
= 250
μ
A
30
V
25
mV/°C
1
μ
A
μ
A
±10
On Characteristics
V
GS(th)
V
GS(th)
T
J
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
V
DS
= V
GS
,
I
D
= 250
μ
A, Referenced to 25°C
V
GS
= 4.5V, I
D
= 2.9A
V
GS
= 3.0V, I
D
= 2.7A
V
GS
= 2.5V, I
D
= 2.5A
V
GS
= 4.5V, I
D
= 2.9A, T
C
= 85°C
V
GS
= 3.0V, I
D
= 2.7A, T
C
= 150°C
V
GS
= 2.5V, I
D
= 2.5A, T
C
= 150°C
I
D
= 250
μ
A
0.4
1.0
1.5
V
–3
mV/
°
C
75
84
92
95
138
150
123
140
163
166
203
268
R
DS(on)
Static Drain–Source
On–Resistance
m
Dynamic Characteristics
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
R
G
Gate Resistance
190
30
20
4.6
220
40
30
pF
pF
pF
V
DS
= 15 V,
f = 1.0 MHz
V
GS
= 0 V,
V
GS
= 0 V,
f = 1.0 MHz
Switching Characteristics
(Note 2)
t
d(on)
Turn–On Delay Time
t
r
Turn–On Rise Time
t
d(off)
Turn–Off Delay Time
t
f
Turn–Off Fall Time
Q
g
Total Gate Charge
Q
gs
Gate–Source Charge
Q
gd
Gate–Drain Charge
6
8
12
2
2.4
0.35
0.75
12
16
21
4
3.0
ns
ns
ns
ns
nC
nC
nC
V
DD
= 15 V,
V
GS
= 4.5 V,
I
D
= 1 A,
R
GEN
= 6
V
DS
= 15 V,
V
GS
= 4.5 V
I
D
= 2.9 A,
Drain–Source Diode Characteristics and Maximum Ratings
I
S
Maximum Continuous Drain–Source Diode Forward Current
V
SD
Drain–Source Diode Forward
Voltage
2.9
A
I
S
= 2.0 A
I
S
= 1.1 A
I
F
= 2.9 A,
dI
F
/dt
= 100 A/μs
0.9
0.8
10
2
1.2
1.2
V
t
rr
Q
rr
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
ns
nC
Schottky Diode Characteristics
10
0.07
0.50
0.49
0.40
0.36
100
4.7
0.57
0.60
0.46
0.43
μ
A
mA
I
R
Reverse Leakage
V
R
= 28 V
T
J
= 25°C
T
J
= 85°C
T
J
= 25°C
T
J
= 85°C
T
J
= 25°C
T
J
= 85°C
V
F
Forward Voltage
I
F
= 1 A
V
V
F
Forward Voltage
I
F
= 500 mA
V
F
相關PDF資料
PDF描述
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相關代理商/技術參數(shù)
參數(shù)描述
FDFMA3N109_08 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Integrated N-Channel PowerTrench㈢ MOSFET and Schottky Diode
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