參數(shù)資料
型號(hào)： FDD5614P
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： JFETs
英文描述： 60V P-Channel PowerTrench MOSFET
中文描述： 15 A, 60 V, 0.1 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252
封裝： TO-252, 3 PIN
文件頁(yè)數(shù)： 2/6頁(yè)
文件大?。?/td> 81K
代理商： FDD5614P
FDD5614P Rev C(W)
Electrical Characteristics
T
A
= 25°C unless otherwise noted
Test Conditions
Symbol
Parameter
Min
Typ
Max
Units
Drain-Source Avalanche Ratings
(Note 1)
W
DSS
Single Pulse Drain-Source
Avalanche Energy
I
AR
Maximum Drain-Source Avalanche
Current
Off Characteristics
BV
DSS
Drain–Source Breakdown Voltage
BV
DSS
T
J
Coefficient
I
DSS
Zero Gate Voltage Drain Current
I
GSSF
Gate–Body Leakage, Forward
I
GSSR
Gate–Body Leakage, Reverse
V
DD
= –30 V,
I
D
= –4.5 A
90
mJ
–4.5
A
V
GS
= 0 V, I
D
= –250
μ
A
–60
V
Breakdown Voltage Temperature
I
D
= –250
μ
A, Referenced to 25
°
C
–49
mV/
°
C
V
DS
= –48 V,
V
GS
= 20V,
V
GS
= –20 V,
V
GS
= 0 V
V
DS
= 0 V
V
DS
= 0 V
–1
100
–100
μ
A
nA
nA
On Characteristics
V
GS(th)
Gate Threshold Voltage
V
GS(th)
T
J
Temperature Coefficient
R
DS(on)
Static Drain–Source
On–Resistance
(Note 2)
V
DS
= V
GS
, I
D
= –250
μ
A
I
D
= –250
μ
A, Referenced to 25
°
C
–1
–1.6
4
–3
V
Gate Threshold Voltage
mV/
°
C
V
GS
= –10 V,
V
GS
= –4.5 V,
V
GS
= –10 V,I
D
= –4.5 A,T
J
=125
°
C
V
GS
= –10 V,
V
DS
= –5 V
V
DS
= –5 V,
I
D
= –3 A
I
D
= –4.5 A
I
D
= –3.9 A
76
99
137
100
130
185
m
I
D(on)
g
FS
On–State Drain Current
Forward Transconductance
–20
A
S
8
Dynamic Characteristics
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
759
90
39
pF
pF
pF
V
DS
= –30 V,
f = 1.0 MHz
V
GS
= 0 V,
Switching Characteristics
t
d(on)
Turn–On Delay Time
t
r
Turn–On Rise Time
t
d(off)
Turn–Off Delay Time
t
f
Turn–Off Fall Time
Q
g
Total Gate Charge
Q
gs
Gate–Source Charge
Q
gd
Gate–Drain Charge
(Note 2)
7
10
19
12
15
2.5
3.0
14
20
34
22
24
ns
ns
ns
ns
nC
nC
nC
V
DD
= –30 V,
V
GS
= –10 V,
I
D
= –1 A,
R
GEN
= 6
V
DS
= –30V,
V
GS
= –10 V
I
D
= –4.5 A,
Drain–Source Diode Characteristics and Maximum Ratings
I
S
Maximum Continuous Drain–Source Diode Forward Current
V
SD
Drain–Source Diode Forward
Voltage
–3.2
–1.2
A
V
V
GS
= 0 V,
I
S
= –3.2 A
(Note 2)
–0.8
F
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
FDD5614P 制造商:Fairchild Semiconductor Corporation 功能描述:DPAK SINGLE PCH:ROHS COMPLIANT
FDD5614P 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET P D-PAK
FDD5614P_05 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:60V P-Channel PowerTrench㈢ MOSFET
FDD5614P-CUT TAPE 制造商:FAIRCHILD 功能描述:FDD5614P Series 60 V 100 mOhm P-Channel PowerTrench Mosfet TO-252
FDD5670 功能描述:MOSFET 60V N-Ch PowerTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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