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參數(shù)資料
| 型號： | FDD6035 |
| 廠商： | Fairchild Semiconductor Corporation |
| 英文描述： | N-Channel, Logic Level, PowerTrench MOSFET |
| 中文描述： | N溝道，邏輯層次，的PowerTrench MOSFET的 |
| 文件頁數(shù)： | 1/6頁 |
| 文件大小： | 119K |
| 代理商： | FDD6035 |
July 2003
2003 Fairchild Semiconductor Corporation
FDD6035AL Rev. D(W)
FDD6035AL
30V N-Channel PowerTrench
ò
MOSFET
General Description
This N-Channel MOSFET is produced using Fairchild
Semiconductor’s advanced PowerTrench process that
has been especially tailored to minimize the on state
resistance and yet maintain low gate charge for
superior switching performance.
Applications
DC/DC converter
Motor Drives
Features
46 A, 30 V
R
DS(ON)
= 12 m
@ V
GS
= 10 V
R
DS(ON)
= 14 m
@ V
GS
= 4.5 V
Low gate charge
Fast Switching Speed
High performance trench technology for extremely
low R
DS(ON)
G
S
D
D-PAK
(TO-252)
S
G
D
Absolute Maximum Ratings
T
A
=25
o
C unless otherwise noted
Symbol
Parameter
V
DSS
Drain-Source Voltage
V
GSS
Gate-Source Voltage
I
D
Continuous Drain Current @T
C
=25°C
Ratings
30
±
20
46
12
100
56
3.3
1.5
–55 to +175
Units
V
V
A
(Note 3)
@T
A
=25°C
Pulsed
@T
C
=25°C
@T
A
=25°C
@T
A
=25°C
(Note 1a)
(Note 1a)
Power Dissipation
(Note 3)
(Note 1a)
(Note 1b)
P
D
W
T
J
, T
STG
Operating and Storage Junction Temperature Range
°
C
Thermal Characteristics
R
θ
JC
Thermal Resistance, Junction-to-Case
R
θ
JA
Thermal Resistance, Junction-to-Ambient
R
θ
JA
(Note 1)
2.7
45
96
°
C/W
(Note 1a)
(Note 1b)
Package Marking and Ordering Information
Device Marking
Device
FDD6035AL
FDD6035AL
Package
D-PAK (TO-252)
Reel Size
13’’
Tape width
12mm
Quantity
2500 units
F
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FDD6035AL | 功能描述:MOSFET N-Ch PowerTrench Logic Level RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDD6035AL_Q | 功能描述:MOSFET N-Ch PowerTrench Logic Level RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDD603AL | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel Logic Level Enhancement Mode Field Effect Transistor |
| FDD6296 | 功能描述:MOSFET 30V N-Ch PowerTrench Fast Switching RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDD6512A | 功能描述:MOSFET 20V N-Ch PowerTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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